Chemical vapor deposition equipment and method for silicon carbide

Abstract

The invention provides chemical vapor deposition equipment for silicon carbide. The equipment comprises a chemical vapor deposition chamber, an inert gas inlet pipeline and a process gas inlet pipeline, wherein the inert gas inlet pipeline is communicated with the chemical vapor deposition chamber; the process gas inlet pipeline is communicated with the chemical vapor deposition chamber and comprises a mixing device as well as first, second, third and fourth process gas inlet pipeline bodies communicated with the mixing device respectively, and the mixing device is communicated with the chemical vapor deposition chamber; a control valve, a volume flow meter and a mass flow controller are sequentially arranged on each process gas inlet pipeline body. The invention further provides a chemical vapor deposition method for the silicon carbide. Firstly, the volume flow meters and the mass flow controllers are successively used for measuring process gas. The high-precision control on the chemical vapor deposition process for the silicon carbide is realized through accurate measurement of the process gas.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, and more specifically, to a silicon carbide chemical vapor deposition equipment and method. Background technique [0002] Chemical vapor deposition technology (Chemical vapor deposition, referred to as CVD) is that the reaction substance passes through the chemical vapor deposition chamber at a certain flow rate and flow rate under gaseous conditions, and is instantly pyrolyzed to form a solid substance that is deposited on the surface of the heated solid substrate, thereby producing Process technology of solid materials. At present, chemical vapor deposition technology has been widely used in the production of carbon-carbon, carbon-silicon carbide, silicon carbide-silicon carbide and other composite materials, and these composite materials are playing an important role in aerospace, aviation, transportation and other fields. [0003] With the development of society and the adv...

AI Technical Summary

Problems solved by technology

However, existing chemical vapor deposition equipment mainly uses volume flow meters to control the amount of process gas charged into the chemical vapor deposition chamber, and the volume of gas is a function of temperature and pressure, which is easily affected by the environment, so only volume flow It is difficult to accurately control the amount of gas inflated by the meter, which cannot meet the high-precision process requirements, and has an adverse effect on the final performance of the product.

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