Chemical vapor deposition equipment and method for silicon carbide

A chemical vapor deposition, silicon carbide technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of influence, unfavorable product performance, unable to meet high-precision process and other problems

Active Publication Date: 2014-12-24
ADVANCED FOR MATERIALS & EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, existing chemical vapor deposition equipment mainly uses volume flow meters to control the amount of process gas charged into the chemical vapor deposition chamber, and the volume of gas is a function of temperature and pressure, which is easily

Method used

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  • Chemical vapor deposition equipment and method for silicon carbide
  • Chemical vapor deposition equipment and method for silicon carbide

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Embodiment 1

[0049] The schematic structural diagram of the silicon carbide chemical vapor deposition equipment provided in embodiment 1, as figure 1 shown. Among them, 1 is the chemical vapor deposition chamber, 2 is the inert gas inlet pipe, 3 is the mixing device, 4 is the first process gas inlet pipe, 5 is the second process gas inlet pipe, 6 is the third process gas inlet Pipe, 7 is the fourth process gas inlet pipe, 8 is the control valve, 9 is the volume flow meter, 10 is the mass flow controller, 11 is the carrier gas inlet pipe, 12 is the deposition source storage device, 13 is the chemical vapor deposition chamber Body, 14 is a gas distribution box, 15 is a gas nozzle, 16 is a heating element, 17 is a heat insulation layer, 18 is a pressure reducing valve, 19 is a solenoid valve, 20 is a manual ball valve, 21 is a heating pipe, and 22 is a pneumatic ball valve.

[0050] The chemical vapor deposition chamber (1) comprises: a chemical vapor deposition chamber (13); a gas distribut...

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Abstract

The invention provides chemical vapor deposition equipment for silicon carbide. The equipment comprises a chemical vapor deposition chamber, an inert gas inlet pipeline and a process gas inlet pipeline, wherein the inert gas inlet pipeline is communicated with the chemical vapor deposition chamber; the process gas inlet pipeline is communicated with the chemical vapor deposition chamber and comprises a mixing device as well as first, second, third and fourth process gas inlet pipeline bodies communicated with the mixing device respectively, and the mixing device is communicated with the chemical vapor deposition chamber; a control valve, a volume flow meter and a mass flow controller are sequentially arranged on each process gas inlet pipeline body. The invention further provides a chemical vapor deposition method for the silicon carbide. Firstly, the volume flow meters and the mass flow controllers are successively used for measuring process gas. The high-precision control on the chemical vapor deposition process for the silicon carbide is realized through accurate measurement of the process gas.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, and more specifically, to a silicon carbide chemical vapor deposition equipment and method. Background technique [0002] Chemical vapor deposition technology (Chemical vapor deposition, referred to as CVD) is that the reaction substance passes through the chemical vapor deposition chamber at a certain flow rate and flow rate under gaseous conditions, and is instantly pyrolyzed to form a solid substance that is deposited on the surface of the heated solid substrate, thereby producing Process technology of solid materials. At present, chemical vapor deposition technology has been widely used in the production of carbon-carbon, carbon-silicon carbide, silicon carbide-silicon carbide and other composite materials, and these composite materials are playing an important role in aerospace, aviation, transportation and other fields. [0003] With the development of society and the adv...

Claims

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Application Information

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IPC IPC(8): C23C16/32C23C16/455C23C16/448C23C16/52
Inventor 戴煜胡祥龙周岳兵
Owner ADVANCED FOR MATERIALS & EQUIP
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