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A kind of thin film transistor, array substrate, and display device

A thin film transistor and conductor technology, which is applied in the fields of array substrates, display devices, and thin film transistors, can solve the problems of small ratio of on-state current to off-state current, etc.

Active Publication Date: 2017-02-15
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] A thin film transistor, an array substrate, and a display device provided by an embodiment of the present invention are used to solve the problem in the prior art that the ratio of the on-state current to the off-state current of a TFT is relatively small

Method used

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  • A kind of thin film transistor, array substrate, and display device
  • A kind of thin film transistor, array substrate, and display device
  • A kind of thin film transistor, array substrate, and display device

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Embodiment

[0128] Such as Figure 4 As shown, the active layer includes: a plurality of core-shell particles 23 in which the second structure part 22 is a core and the first structure part 21 is a shell. The shape of each core-shell particle 23 is similar to a rod shape, and the second structure part 22 ( That is, the metal Zn (zinc) is used for the intermediate core, and the first structure part 21 (ie, the shell covered thereon) is made of semiconductor zinc oxide, zinc sulfide, or indium gallium zinc oxide.

[0129]When a turn-on voltage is applied to the gate, the first structure part 21 changes from the off state to the on state, and the source electrons can be transferred from the source to the drain, and because the second structure part 22 is a metal with good conductivity , the source electrons will choose to pass through the second structure part 22 with better conductivity when passing through the first structure part 21; the implementation mode of the drain hole is similar to...

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Abstract

The invention relates to the field of display technology, in particular to a thin film transistor, an array substrate, and a display device, which are used to solve the problem in the prior art that the ratio of the on-state current to the off-state current of a TFT is relatively small. The TFT provided by the embodiment of the present invention includes a gate, an active layer located on the gate, and a source and a drain respectively located on both sides of the active layer and partially overlapping the active layer. pole; the active layer includes: at least one first structure part and at least one second structure part, the material of the first structure part is a semiconductor, the material of the second structure part is a set conductor, and the material of the set The conduction performance of a fixed conductor is better than that of the semiconductor after being turned on; wherein, when a turn-on voltage is applied on the gate, the conduction channel between the source and the drain includes the first structure part and the second structural part. The embodiment of the present invention increases the ratio of the on-state current to the off-state current of the TFT.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a thin film transistor, an array substrate, and a display device. Background technique [0002] The array substrate of the display device includes a base substrate, and a plurality of gate lines and data lines intersecting each other on the inner side of the base substrate to define a plurality of pixel units, wherein each pixel unit is provided with a TFT (Thin Film Transistor, thin film transistor ) and a pixel electrode electrically connected to the TFT. [0003] Taking a TFT with a bottom gate structure as an example, the TFT of each pixel unit includes a gate on the base substrate, an active layer on the gate, and a A source and a drain in which the source layers partially overlap; wherein, when a turn-on voltage is applied to the gate, the active layer is turned on, so that electrons from the source are transferred to the drain through the turned-on active layer ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L27/12G02F1/1368
CPCG02F1/1368H01L27/1214H01L27/1222H01L29/786
Inventor 曾庆慧张卓藤野诚治
Owner BOE TECH GRP CO LTD
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