A kind of light-emitting diode epitaxial wafer growth method

Abstract

The invention discloses a method for growing a light-emitting diode epitaxial wafer, which belongs to the technical field of semiconductors. The method includes: controlling the temperature in the reaction chamber to the first growth temperature, continuously feeding ammonia gas into the reaction chamber and intermittently feeding a trimethylgallium source, and growing an undoped layer on a glass substrate; Adjust the temperature in the reaction chamber to the second growth temperature, continuously feed ammonia and silicon sources into the reaction chamber and intermittently feed trimethylgallium sources, and grow an N-type layer on the undoped layer; The temperature in the chamber is adjusted to the third growth temperature, ammonia gas is continuously fed into the reaction chamber and trimethylgallium source and trimethylindium source are intermittently fed into the reaction chamber, and an active layer is grown on the N-type layer; The temperature in the chamber is adjusted to the fourth growth temperature, and the ammonia gas, the dimagnesocene source and the trimethylgallium source are continuously fed into the reaction chamber to grow a P-type layer on the active layer; the first growth temperature , the second growth temperature, the third growth temperature and the fourth growth temperature are not more than 480°.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a light-emitting diode epitaxial wafer. Background technique [0002] Light-emitting diode chip The core component of a light-emitting diode, a light-emitting diode chip mainly includes a substrate, an epitaxial layer grown on the substrate, and electrodes arranged on the epitaxial layer. [0003] At present, GaN-based light-emitting diodes generally use metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, referred to as "MOCVD") to grow epitaxial layers on the substrate. . However, substrates made of these commonly used materials are small in size and high in cost due to substrate warpage, and glass, as a common material, has a lower cost than the above-mentioned commonly used materials. [0004] In the process of realizing the present invention, the inventor finds that there are at least the following problems in the pr...

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Problems solved by technology

[0006] In order to solve the problem that glass cannot be used as a material for making GaN-based light-emitting diode chip substrates in the traditional MOCVD method due to its low softening temperature, an embodiment of the present invention provides a method for growing light-emitting diode epitaxial wafers

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