Light-emitting diode epitaxial wafer growth method

Abstract

The invention discloses a light-emitting diode epitaxial wafer growth method, and belongs to the technical field of semiconductors. The method includes the steps of controlling the temperature in a reaction cavity to be the first growth temperature, unceasingly injecting ammonia gas into the reaction cavity, intermittently injecting a trimethyl gallium source into the reaction cavity, and growing an undoped layer on a glass substrate; regulating the temperature in the reaction cavity to be the second growth temperature, unceasingly injecting ammonia gas and a silicon source into the reaction cavity, intermittently injecting the trimethyl gallium source into the reaction cavity, and growing an N type layer on the undoped layer; regulating the temperature in the reaction cavity to be the third growth temperature, unceasingly injecting ammonia gas into the reaction cavity, intermittently injecting the trimethyl gallium source and a trimethyl indium source into the reaction cavity, and growing an active layer on the N type layer; regulating the temperature in the reaction cavity to be the fourth growth temperature, unceasingly injecting ammonia gas and a magnesocene source into the reaction cavity, intermittently injecting the trimethyl gallium source into the reaction cavity, and growing a P type layer on the active layer, wherein none of the first growth temperature, the second growth temperature, the third growth temperature and the fourth growth temperature exceeds 480 DEG C.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a light-emitting diode epitaxial wafer. Background technique [0002] Light-emitting diode chip The core component of a light-emitting diode, a light-emitting diode chip mainly includes a substrate, an epitaxial layer grown on the substrate, and electrodes arranged on the epitaxial layer. [0003] At present, GaN-based light-emitting diodes generally use metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, referred to as "MOCVD") to grow epitaxial layers on the substrate. The commonly used substrate materials are sapphire, silicon carbide and silicon. However, substrates made of these commonly used materials are small in size and high in cost due to substrate warpage, and glass, as a common material, has a lower cost than the above-mentioned commonly used materials. [0004] In the process of realizing the present inventi...

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Problems solved by technology

[0006] In order to solve the problem that glass cannot be used as a material for making GaN-based light-emitting diode chip substrates in the traditional MOCVD method due to its low softening temperature, an embodiment of the present invention provides a method for growing light-emitting diode epitaxial wafers

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