Near-infrared multi-photon detector

A multi-photon and detector technology, applied in the field of photon detectors, can solve the problem of no multi-photon resolution and achieve high robustness

Active Publication Date: 2015-01-07
NAT SPACE SCI CENT CAS
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Single-molecule detectors such as InGaAs / InP material APD can only distinguish a single photon, and when multiple photons arrive at a time, they will also be counted as a single photon, that is, there is no multi-photon resolution capability

Method used

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Embodiment Construction

[0019] The present invention will be further described now in conjunction with accompanying drawing.

[0020] refer to figure 1 , the near-infrared multiphoton detector of the present invention includes: a photo avalanche diode array, a readout chip; wherein, the photo avalanche diode array includes a plurality of units, each unit includes a photo avalanche diode of InGaAs / InP material, and these InGaAs The photo avalanche diodes of InGaAs / InP material in the photo avalanche diode array are arranged in an array; each photo avalanche diode of InGaAs / InP material in the photo avalanche diode array is connected with the readout chip through an In column.

[0021] figure 2 It is a diagram of the working principle of the near-infrared multiphoton detector of the present invention. The square-shaped quadrilateral in the upper part of the figure represents an array composed of four photoelectric avalanche diodes, and the arrow represents light incident. P in the figure 0 ,P 1 ,P...

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Abstract

The invention relates to a near-infrared multi-photon detector. The near-infrared multi-photon detector comprises an avalanche photodiode array and a read-out chip. The avalanche photodiode array comprises a plurality of units arranged in an array, each unit comprises one avalanche photodiode made of InGaAs/InP, and all the avalanche photodiodes made of the InGaAs/InP in the avalanche photodiode array are connected with the read-out chip through In columns.

Description

technical field [0001] The invention relates to a photon detector, in particular to a near-infrared multi-photon detector. Background technique [0002] Single Photon Detector (Single Photon Detector) has a wide range of application prospects in aerospace, lidar, quantum information, biomedicine and other fields due to its extremely weak light detection performance. Avalanche Photon Diode (APD for short) is a typical single photon detector. The application of photo avalanche diode of Si material in the visible light band has been researched and developed to a great extent, while in the near infrared band, InGaAs / InP material The APD is more favored by everyone. Since the 1310nm band and the 1550nm band are two low-loss windows of the optical fiber, and the safety of human eyes in these bands, the APD of InGaAs / InP has received special attention in the fields of quantum secret communication, laser ranging and lidar. [0003] When the bias voltage across the APD of InGaAs / In...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J11/00
Inventor 翟光杰郑福王超
Owner NAT SPACE SCI CENT CAS
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