A low-cost high-power semiconductor fundamental transverse mode laser chip structure

Abstract

The invention provides a low-cost and high-power semiconductor-base transverse mode laser chip structure. The low-cost and high-power semiconductor-base transverse mode laser chip structure comprises an oscillation part, a transition part, an amplifying part and bottom face grooves. By means of the transition part, the oscillation part and the amplifying part are connected and fused. The bottom face grooves are located in the two sides of the oscillation part, the two sides of the transition part and the two sides of the amplifying part, and the depth of the bottom face grooves in the two sides of the oscillation part, the depth of the bottom face grooves in the two sides of the transition part and the depth of the bottom face grooves in the two sides of the amplifying part are different. According to the low-cost and high-power semiconductor-base transverse mode laser chip structure, the oscillation part and the amplifying part are ingeniously connected and fused through the transition part, and by means of the bottom face grooves with the different depths in the two sides of the oscillation part, the two sides of the transition part and the two sides of the amplifying part, unexpected reflection is prevented from forming and damaging base transverse mode outputting, and therefore a high-power semiconductor-base transverse mode laser output chip can be manufactured only through the ordinary ridge waveguide technology, the manufacturing technology of the chip is simple and mature, the yield is high, cost is low, and the chip is suitable for being produced and manufactured in batches.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, and in particular relates to a low-cost high-power semiconductor fundamental transverse mode laser chip structure. Background technique [0002] At present, to achieve low-cost and high-power fundamental transverse mode output requirements, it is generally achieved by integrating a laser and a semiconductor optical amplifier into a chip. The manufacturing process is complex, the yield is low, and the cost is high. The typical three methods are as follows: figure 1 and figure 2 shown. specifically, figure 1 The method adopts DFB (distributed feedback laser) or DBR (distributed Bragg reflection) semiconductor laser chip as the oscillation part 11, and its output laser is further amplified and output by the subsequent semiconductor optical amplification part 12, and the oscillation part 11 ensures the output of the fundamental transverse mode of the laser. The semiconductor optical amplificat...

AI Technical Summary

Problems solved by technology

[0003] Aiming at the technical problems existing in the existing high-power semiconductor-based transverse mode laser chips that expensive equipment and complex processes are required to manufacture fixed-value reflective gratings, and the process consistency is poor due to the manufacture of reflective grooves, and mass production cannot be realized, the present invention Provide a new low-cost high-power semiconductor fundamental transverse mode laser chip structure

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