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Pixel structure, display panel and production method of pixel structure

A technology of pixel structure and manufacturing method, applied in nonlinear optics, instruments, optics, etc., can solve the problems of reducing panel light transmittance, occupying pixel aperture ratio, etc., so as to reduce parasitic capacitance, increase aperture ratio, and reduce area area. Effect

Active Publication Date: 2015-01-14
NANJING CEC PANDA LCD TECH
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Problems solved by technology

Moreover, in order to meet the requirements of the storage capacitor, a wider storage electrode is required, occupying the pixel aperture ratio
For the optical alignment process, when optical alignment is used, the domain division region is located in the middle of the pixel, and the black lines generated by the disordered alignment of the domain division boundary region will reduce the light transmittance of the panel

Method used

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  • Pixel structure, display panel and production method of pixel structure
  • Pixel structure, display panel and production method of pixel structure
  • Pixel structure, display panel and production method of pixel structure

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no. 1 example

[0084] In order to describe the first embodiment of the present invention in detail, the manufacturing steps described in detail are as follows:

[0085] Step 1: If Figure 5 As shown, on a substrate such as glass, the structure of the first metal layer such as the scanning line 31, the horizontal common electrode lines 32, 32', and the storage electrode 41 is formed at the same time. And cover the gate insulation layer on the first metal layer. Figure 6 for Figure 5 The cross-sectional view of the middle pixel structure along the A5-A5' direction. Such as Figure 6 As shown, the pattern of the first metal layer such as the scan line 31 and the storage electrode 41 is distributed on the substrate such as glass, and the gate insulating layer 63 is covered on the pattern of the first metal layer.

[0086] Step 2: If Figure 7 As shown, a semiconductor active layer pattern 43 is formed above the gate insulating layer, and the semiconductor material may be amorphous silicon...

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Abstract

The invention discloses a pixel structure, a production method thereof and a display panel. The pixel structure comprises a substrate. Two horizontal public electrode lines, two vertical public electrode lines, two data lines, a scanning line, a storage electrode, an active element and a pixel electrode are arranged on the substrate. The vertical public electrode lines and the horizontal public electrode lines are in cross arrangement to form a pixel area in an encircling mode. The data lines are arranged in the pixel area and divide the pixel area into a first sub area, a second sub area and a third sub area. The scanning line and the date lines are in cross arrangement to divide the pixel area into an upper area and a lower area. The storage electrode and one of the horizontal public electrode lines are in overlapping arrangement. The active element is arranged in a cross area formed by the storage electrode and the scanning line. The pixel electrode is electrically connected with the active element and the storage electrode through a contact hole.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a pixel structure, a manufacturing method thereof, and a display panel. Background technique [0002] With the development of high-definition liquid crystal display products, the resolution of the display is getting higher and higher, the wiring of the corresponding array substrate will increase exponentially, and the pixel aperture ratio will decrease compared with conventional resolution products. Due to the increase in the number of wiring, the parasitic capacitance will also increase at the same time, which requires further increasing the width of the wiring to ensure the normal transmission of signals, which will further lead to a decrease in the aperture ratio of the pixel, resulting in the light transmission of the pixel. As the rate declines, it will eventually affect the market competitiveness of the product. [0003] If the high-frequency drive is increased fr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G02F1/1368G02F1/1343G02F1/1337
CPCG02F1/133707G02F1/134309G02F1/136213G02F1/136286G02F1/134318
Inventor 马群刚王海宏
Owner NANJING CEC PANDA LCD TECH
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