Polycrystalline silicon manufacturing method

Abstract

A polycrystalline silicon manufacturing method comprises the steps that S11 a solid-state laser device is used for emitting lasers to irradiate the lower surface of a non-crystalline silicon layer so as to preheat the non-crystalline silicon layer; S12 a quasimolecule laser device is used for irradiating the upper surface of the non-crystalline silicon layer so as to crystallize the non-crystalline silicon layer to form polycrystalline silicon, wherein the step S11 is executed earlier than the step S12 by preset time or simultaneously with the step S12. The polycrystalline silicon manufacturing method can greatly shorten the time for melting and crystallizing the non-crystalline silicon to form the polycrystalline silicon, and therefore the yield of the polycrystalline silicon is effectively increased; due to the fact that the temperature gradient during melting and crystallizing of the non-crystalline silicon is reduced, the crystallization rate of the polycrystalline silicon can be increased, and the crystallization quality of the polycrystalline silicon can be effectively improved; in addition, the emitting frequency of the expensive quasimolecule laser device can be reduced, the service life of the quasimolecule laser device is prolonged accordingly, and the cost is further reduced.

Description

technical field [0001] The present application relates to a polysilicon manufacturing method, in particular to a polysilicon manufacturing method using excimer laser annealing. Background technique [0002] With the wide application of semiconductor technology, the demand for polysilicon is increasing. At present, excimer laser annealing technology has been used to produce polysilicon. [0003] figure 1 A schematic diagram of a polysilicon manufacturing method using excimer laser annealing in the prior art is exemplarily shown. Such as figure 1 As shown in, in the polysilicon manufacturing method that adopts excimer laser annealing in the prior art, excimer laser 2 emits laser light 3 and irradiates the upper surface of amorphous silicon layer 1, makes the upper surface of amorphous silicon layer 1 melt, thereby crystallized into polysilicon. For example, U.S. Patent Application No. 5,529,951 has adopted this method. It uses an excimer (excimer) laser with a wavelength ...

AI Technical Summary

Problems solved by technology

[0004] However, in the existing polysilicon production method using excimer laser annealing, the laser energy cannot quickly bring the amorphous silicon layer to the melting temperature, but needs to use multiple pulses of excimer laser energy to make the amorphous silicon layer The silicon layer melts and crystallizes into polysilicon

Moreover, the crystallization rate of polysilicon that still exists in the polysilicon manufacturing method that adopts excimer laser annealing in the prior art is not stable, and needs very high excimer laser energy

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