Semiconductor structure and manufacturing method of semiconductor structure

Abstract

The invention provides a manufacturing method of a semiconductor structure. The manufacturing method is characterized by including the steps of (a) providing a semiconductor substrate, wherein an insulating layer is arranged on the substrate, and a single-atomic-layer or double-atomic-layer silicon channel layer is arranged on the insulating layer; (b) carrying out patterning on the single-atomic-layer or double-atomic-layer silicon channel layer to form channel regions corresponding to field effect transistors; (c) forming source / drain regions at the edges of the channel layer and on the insulating layer; (d) forming gate dielectrics and gates on the channel layer. Correspondingly, the invention further provides the semiconductor structure. According to the manufacturing method and the semiconductor structure, single-atomic-layer silicon or double-atomic-layer silicon is used as the channel materials of the field effect transistors, the energy band structure can be changed by using the quantum restriction effect of the single-atomic-layer or double-atomic-layer silicon, and novel nanometer electronic devices can be designed.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor structures, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] As the size of traditional silicon-based transistors is gradually miniaturized to the molecular scale, a lot of research work has been done on nanoscale transport junctions, expecting to be able to characterize the electrical properties of single or several organic molecules. The ultimate goal in the field of nanoelectronics and molecular electronics is to obtain single-molecule or single-atom transistors. In principle, single-molecule-scale transistor devices can overcome the low carrier concentration defects of semiconductor materials and exhibit good field-effect transistor properties. To achieve this ultimate goal, it is crucial to prepare new materials, develop new device structures, and new methods for parameter optimization to obtain high carrier mobility and h...

AI Technical Summary

Problems solved by technology

Monoatomic layer silicon / double atomic layer silicon has physical and electrical properties similar to graphene, and its research in field effect transistors has rarely been reported

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