Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solid-state imaging device, manufacturing method thereof, and electronic device

A solid-state imaging device and logic circuit technology, which is applied in semiconductor/solid-state device manufacturing, radiation control devices, televisions, etc., can solve problems such as deterioration of flash, and achieve the effect of reducing flash components

Active Publication Date: 2019-01-18
SONY GRP CORP
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the incident light is reflected by the guard ring, so the flash becomes bad

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state imaging device, manufacturing method thereof, and electronic device
  • Solid-state imaging device, manufacturing method thereof, and electronic device
  • Solid-state imaging device, manufacturing method thereof, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0048] 2. First Embodiment (Configuration Example of Laminated Back-illuminated Solid-State Imaging Device)

no. 2 example

[0049] 3. Second Embodiment (Configuration Example of Non-Laminated Back-illuminated Solid-State Imaging Device)

[0050] 4. The third embodiment (retaining ring structure with arcuate shape)

[0051] 5. Fourth Embodiment (Trench structure between pixels with arcuate profile)

[0052] 6. Application of electronic equipment

[0053]

[0054]

[0055] figure 1 A schematic configuration of a solid-state imaging device according to an embodiment of the present disclosure is shown.

[0056] figure 1 The illustrated solid-state imaging device 1 includes a semiconductor substrate 12 using silicon (Si) as a semiconductor, a pixel array 3 in which pixels 2 are arranged in a two-dimensional array, and peripheral circuits. The peripheral circuit includes a vertical drive circuit 4 , a column signal processing circuit 5 , a horizontal drive circuit 6 , an output circuit 7 and a control circuit 8 .

[0057] Each pixel 2 includes a photodiode as a photoelectric conversion element a...

no. 3 example

[0205]

[0206] In the above-described embodiments, each of the pad surrounding guard ring PG and the chip surrounding guard ring CG has a forward tapered shape in which the top diameter on the light incident surface side is larger than the bottom diameter on the bottom. Other structures of the pad surrounding guard ring PG and the chip surrounding guard ring CG will be described below.

[0207] The pad surrounding guard ring PG and the chip surrounding guard ring CG may be formed by forming an opening 202 having a high aspect ratio to a semiconductor substrate 201 by a dry etching process and spin-coating a coating material 203 by a spin coating method to fill the opening 202 with the coating material 203. ,Such as Figure 21 shown.

[0208] However, depending on the shape of the opening 202, the coating material 203 on the upper part of the opening 202 may spill due to the centrifugal force of the rotation, as Figure 21 shown. Once the coating material 203 spills out a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A solid-state imaging device, its manufacturing method, and electronic equipment. The solid-state imaging device includes an insulating structure formed of an insulating substance penetrating at least the silicon layer on the light receiving surface side, the insulating structure has a forward tapered shape, wherein the top diameter of the upper part of the light receiving surface side of the silicon layer is larger than the silicon layer The bottom diameter of the bottom of the layer. Furthermore, there are provided a method of manufacturing a solid-state imaging device and an electronic device including the solid-state imaging device.

Description

technical field [0001] The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and electronic equipment, particularly a solid-state imaging device capable of reducing flare components, a manufacturing method thereof, and electronic equipment. Background technique [0002] A method of manufacturing a semiconductor chip includes forming a plurality of semiconductor chips on a wafer, and dicing the semiconductor chips along a scribe area using a blade to separate the semiconductor chips. In this method, possible chipping by cutting should be prevented. [0003] When wire-bonding the electrode pads in the semiconductor chip, or when probing the electrode pads during inspection, no leakage or damage should occur even if the side walls come into contact with the bonding wires or probes. [0004] In order to prevent possible chipping by cutting with a blade or leakage or damage during wire bonding or probing, solid-state imaging devices havi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/14601H01L27/14627H01L27/14629H01L27/1463H01L27/14634H01L27/14636H01L27/1464H01L27/1469H01L27/14623H01L27/1462H01L27/14621H01L27/14632H01L27/14645H01L27/14685H01L27/14687H01L21/7682H01L21/76898H04N25/616H04N25/772H01L31/022416
Inventor 水田恭平大地朋和千叶洋平
Owner SONY GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com