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A kind of silicon carbide MOS device and manufacturing method thereof

A MOS device and silicon carbide technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of low electron mobility in the channel of silicon carbide trench gate power MOS devices, ion scattering phenomenon, and high probability of collision And other issues

Active Publication Date: 2017-12-08
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After etching, the surface roughness of the side wall and bottom of the gate groove is relatively large. When the silicon carbide groove gate power MOS device is working, the side wall of the gate groove is used as the conductive channel of the device. The surface roughness of the conductive channel is relatively high, which will make the device pass through. The probability of collision of carrier ions in the inversion channel layer is relatively high, and the phenomenon of ion scattering is intensified, resulting in extremely low channel electron mobility of silicon carbide trench gate power MOS devices

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  • A kind of silicon carbide MOS device and manufacturing method thereof
  • A kind of silicon carbide MOS device and manufacturing method thereof
  • A kind of silicon carbide MOS device and manufacturing method thereof

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Embodiment Construction

[0038] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0039] Such as figure 1 As shown, the present invention provides a silicon carbide MOS device, including: a SiC substrate 8, a N － The epitaxial layer 7 is arranged on the N － P above the epitaxial layer 7 + The epitaxial layer 6 is disposed on the P + N above the epitaxial layer 6 + Epitaxial layer 5, through the N + epi layer 5 and P + epitaxial layer 6 and embedded N － The gate groove of the epitaxial layer 7, the SiO disposed above the gate groove ...

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Abstract

The invention provides a novel silicon carbide MOS device and a manufacturing method thereof. The inner surface with great roughness of a grid trough formed after dry etching extends externally to form a P-epitaxial layer, and because the surface roughness of the P-epitaxial layer behind an epitaxial layer is relatively low, the probability of carrier collision or scattering in a conducting channel is lowered, thereby improving the carrier migration rate of an inversion channel of the silicon carbide MOS device and achieving the aim of reducing the on resistance of the device.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to a silicon carbide MOS device and a manufacturing method thereof. Background technique [0002] The silicon carbide trench-gate power MOS device formed in the prior art uses dry etching of the gate trench. After etching, the surface roughness of the side wall and bottom of the gate groove is relatively large. When the silicon carbide groove gate power MOS device is working, the side wall of the gate groove is used as the conductive channel of the device. The surface roughness of the conductive channel is relatively high, which will make the device pass through. The probability of carrier ion collision in the inversion channel layer is relatively high, and the phenomenon of ion scattering is intensified, resulting in extremely low channel electron mobility of silicon carbide trench gate power MOS devices. [0003] Therefore, there is a need for an advanced silicon carb...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/04
CPCH01L29/06H01L29/24H01L29/34H01L29/66477H01L29/78
Inventor 赵艳黎刘可安李诚瞻高云斌蒋华平吴佳丁荣军
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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