Quick power-down module of low-voltage equipment
A technology of low-voltage equipment and electrical modules, applied in the field of rapid power-down modules, which can solve problems such as complex circuit forms and lack of surge current protection measures for PNP transistors
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Embodiment 1
[0018] The circuit diagram of the first preferred embodiment of the fast power-down module of a low-voltage equipment of the present invention is as follows figure 2 As shown, it includes: switch field effect transistor, driving field effect transistor, capacitor CE1, resistor R1, adjustable resistor R3, resistor R4, resistor R2, and capacitor C1.
[0019] The switch field effect transistor Q2 is the power switch of the fast power-down module of the low-voltage equipment, its switch input pole is used as the input end of the circuit, its switch output pole is used as the output end of the circuit, and its switch control pole is connected with the described drive The driving input pole of the field effect transistor Q1 is connected;
[0020] The capacitor CE1 is connected in parallel with the adjustable resistor R3, the first node of which is connected in parallel with the switch input pole of the switch field effect transistor Q2, and the second node is connected to the groun...
Embodiment 2
[0028] As an alternative to Embodiment 1, it can also be an equivalent circuit diagram of an N-channel enhanced field effect transistor as a switch field effect transistor and a P-channel enhanced field effect transistor as a driving field effect transistor; or an N-channel enhanced field effect transistor. The equivalent circuit diagram of the FET as the switch FET and the N-channel enhanced FET as the driving FET; or the P-channel enhanced FET as the switch FET, and the P-channel enhanced FET as the driving FET. The tube is used as the equivalent circuit diagram of the drive field effect tube.
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