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Light-emitting diode chip preparation method

A technology of light-emitting diodes and chips, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of large corrosion of epitaxial structures, performance impact of LED chips, etc., and achieve the effect of improving luminous efficiency

Active Publication Date: 2015-01-28
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] During the etching process, the higher the temperature of the etchant, the longer the etching time, and the more complete the corrosion of the ablation product. However, since the etchant usually has a certain corrosion effect on the epitaxial structure, the higher the temperature, the longer the time, and the more complete the corrosion of the epitaxial structure. The corrosion effect is also greater, so the use of this scribing method is easy to affect the performance of the LED chip

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Embodiment 1

[0050] An embodiment of the present invention provides a method for preparing a light-emitting diode chip, see figure 1 , the method also includes:

[0051] Step 101: growing an epitaxial layer on a substrate to obtain an epitaxial wafer. The epitaxial layer includes an N-type layer, a multi-quantum well layer and a P-type layer stacked on the substrate in sequence.

[0052] Step 102: Etching the epitaxial layer twice to form a first groove and a second groove on the epitaxial layer, the second groove is located in the first groove, the bottom surface of the second groove is the substrate, and the second groove is located in the first groove. The width of the bottom surface of the second groove is smaller than the width of the bottom surface of the first groove.

[0053] Wherein, the purpose of etching the first groove is to generate an N-type region for subsequent formation of an N electrode;

[0054] The purpose of etching the second groove is to not pass through the epita...

Embodiment 2

[0062] An embodiment of the present invention provides a method for preparing a light-emitting diode chip, see figure 2 , the method also includes:

[0063] Step 201: growing an epitaxial layer on the substrate to obtain an epitaxial wafer, the epitaxial layer includes an N-type layer, a multi-quantum well layer and a P-type layer stacked on the substrate in sequence.

[0064] Such as image 3 As shown, an epitaxial layer 22 is grown on a substrate 21 , and the epitaxial layer 22 includes an N-type layer 221 , multiple quantum wells 222 and a P-type layer 223 .

[0065] Step 202: Under the cover of the first mask, etch the epitaxial layer until the N-type layer is exposed, and form a first groove on the N-type layer.

[0066] Such as Figure 4 As shown, a first groove 23 is etched on the epitaxial layer 22 .

[0067] Step 203: Under the cover of the second mask, etch the bottom surface of the first groove to expose the substrate, and form a second groove in the first groo...

Embodiment 3

[0100] The embodiment of the present invention provides a method for preparing a light-emitting diode chip. The difference between this method and the method provided in Embodiment 2 lies in how to etch the epitaxial layer twice to form the first groove and the second groove on the epitaxial layer. Groove, specifically, this embodiment adopts the following method to realize:

[0101] Under the cover of the first mask, the epitaxial layer is etched to expose the substrate.

[0102] Such as Figure 10 As shown, an epitaxial layer 32 composed of an N-type layer 321 , a multi-quantum well layer 322 and a P-type layer 323 is provided on a substrate 31 , and is directly etched to expose the substrate 31 during etching.

[0103] Under the cover of the second mask, etch the epitaxial layer until the N-type layer is exposed, and form the first groove and the second groove on the epitaxial layer.

[0104] Such as Figure 11 As shown, the first groove 33 and the second groove 34 are f...

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Abstract

The invention discloses a light-emitting diode chip preparation method, and belongs to the field of light-emitting diodes. The light-emitting diode chip preparation method comprises the steps that an epitaxial layer is grown on a substrate to obtain an epitaxial slice, wherein the epitaxial layer comprises an N-type layer, a multi-quantum-well layer and a P-type layer, and the N-type layer, the multi-quantum-well layer and the P-type layer are stacked on the substrate in sequence; the epitaxial layer is etched twice so that a first groove and a second groove can be formed in the epitaxial layer, wherein the second groove is located in the first groove, the bottom surface of the second groove is the substrate, and the bottom surface of the second groove is narrower than the bottom surface of the first groove; a protective layer is deposited on the surface of the etched epitaxial layer; scribing is conducted in the second groove through a laser scribing process, so that a V-shaped scribed groove is formed, and the bottom surface of the second groove is narrower than an opening of the V-shaped scribed groove; the epitaxial slice obtained after scribing is placed in corrosive liquid for corrosion, and ablation materials obtained through laser scribing are removed; the protective layer on the surface of the epitaxial slice is removed; a P electrode and an N electrode are formed on the P-type layer and the N-type layer respectively.

Description

technical field [0001] The present invention relates to the field of light emitting diodes (English: Light Emitting Diode, LED for short), in particular to a method for preparing a light emitting diode chip. Background technique [0002] In the process of LED chip production, the entire wafer (epiwafer) needs to be split according to the chip design size. Currently, the commonly used methods of splitting the entire wafer include: back-scribing and front-splitting, front-scratching and back-splitting, invisible cutting, etc. [0003] Among them, the complete process of preparing LED chips by using the method of front scribing and back cracking is as follows: grow the epitaxial layer on the substrate; then etch the epitaxial layer; Electrodes; Finally, qualified LED chips are produced through processes such as thinning, splitting, testing, and sorting. When corroding the ablation surface, a mixture of phosphoric acid and sulfuric acid of about 1:3 is often used as the corrosi...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/005H01L33/06H01L2933/0008
Inventor 张威王江波
Owner HC SEMITEK CORP