Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of light-emitting diode chip

A technology of light-emitting diodes and chips, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of large corrosion of epitaxial structures and impact on performance of LED chips, and achieve the effect of improving luminous efficiency.

Active Publication Date: 2018-01-12
HC SEMITEK CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] During the etching process, the higher the temperature of the etchant, the longer the etching time, and the more complete the corrosion of the ablation product. However, since the etchant usually has a certain corrosion effect on the epitaxial structure, the higher the temperature, the longer the time, and the more complete the corrosion of the epitaxial structure. The corrosion effect is also greater, so the use of this scribing method is easy to affect the performance of the LED chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of light-emitting diode chip
  • Preparation method of light-emitting diode chip
  • Preparation method of light-emitting diode chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] An embodiment of the present invention provides a method for preparing a light-emitting diode chip, see figure 1 , the method also includes:

[0051] Step 101: growing an epitaxial layer on a substrate to obtain an epitaxial wafer. The epitaxial layer includes an N-type layer, a multi-quantum well layer and a P-type layer stacked on the substrate in sequence.

[0052] Step 102: Etching the epitaxial layer twice to form a first groove and a second groove on the epitaxial layer, the second groove is located in the first groove, the bottom surface of the second groove is the substrate, and the second groove is located in the first groove. The width of the bottom surface of the second groove is smaller than the width of the bottom surface of the first groove.

[0053] Wherein, the purpose of etching the first groove is to generate an N-type region for subsequent formation of an N electrode;

[0054] The purpose of etching the second groove is to not pass through the epita...

Embodiment 2

[0062] An embodiment of the present invention provides a method for preparing a light-emitting diode chip, see figure 2 , the method also includes:

[0063] Step 201: growing an epitaxial layer on the substrate to obtain an epitaxial wafer, the epitaxial layer includes an N-type layer, a multi-quantum well layer and a P-type layer stacked on the substrate in sequence.

[0064] Such as image 3 As shown, an epitaxial layer 22 is grown on a substrate 21 , and the epitaxial layer 22 includes an N-type layer 221 , multiple quantum wells 222 and a P-type layer 223 .

[0065] Step 202: Under the cover of the first mask, etch the epitaxial layer until the N-type layer is exposed, and form a first groove on the N-type layer.

[0066] Such as Figure 4 As shown, a first groove 23 is etched on the epitaxial layer 22 .

[0067] Step 203: Under the cover of the second mask, etch the bottom surface of the first groove to expose the substrate, and form a second groove in the first groo...

Embodiment 3

[0100] The embodiment of the present invention provides a method for preparing a light-emitting diode chip. The difference between this method and the method provided in Embodiment 2 lies in how to etch the epitaxial layer twice to form the first groove and the second groove on the epitaxial layer. Groove, specifically, this embodiment adopts the following method to realize:

[0101] Under the cover of the first mask, the epitaxial layer is etched to expose the substrate.

[0102] Such as Figure 10 As shown, an epitaxial layer 32 composed of an N-type layer 321 , a multi-quantum well layer 322 and a P-type layer 323 is provided on a substrate 31 , and is directly etched to expose the substrate 31 during etching.

[0103] Under the cover of the second mask, etch the epitaxial layer until the N-type layer is exposed, and form the first groove and the second groove on the epitaxial layer.

[0104] Such as Figure 11 As shown, the first groove 33 and the second groove 34 are f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a light-emitting diode chip, which belongs to the field of light-emitting diodes. The method includes: growing an epitaxial layer on a substrate to obtain an epitaxial wafer, the epitaxial layer comprising an N-type layer, a multi-quantum well layer and a P-type layer sequentially stacked on the substrate; and performing two etchings on the epitaxial layer to obtain an epitaxial wafer. A first groove and a second groove are formed on the epitaxial layer, the second groove is located in the first groove, the bottom surface of the second groove is the substrate, and the width of the bottom surface of the second groove is smaller than that of the first groove A protective layer is deposited on the surface of the etched epitaxial wafer; a laser scribing process is used to scribe in the second groove to generate a V-shaped groove, and the bottom surface of the second groove is wider than the V-shaped groove The width of the opening of the groove; the epitaxial wafer after dicing is put into the etching solution for etching to remove the ablation produced by the laser scribing; the protective layer on the surface of the epitaxial wafer is removed; formed on the P-type layer and the N-type layer respectively P electrode and N electrode.

Description

technical field [0001] The present invention relates to the field of light emitting diodes (English: Light Emitting Diode, LED for short), in particular to a method for preparing a light emitting diode chip. Background technique [0002] In the process of LED chip production, the entire wafer (epiwafer) needs to be split according to the chip design size. Currently, the commonly used methods of splitting the entire wafer include: back-scribing and front-splitting, front-scratching and back-splitting, invisible cutting, etc. [0003] Among them, the complete process of preparing LED chips by using the method of front scribing and back cracking is as follows: grow the epitaxial layer on the substrate; then etch the epitaxial layer; Electrodes; Finally, qualified LED chips are produced through processes such as thinning, splitting, testing, and sorting. When corroding the ablation surface, a mixture of phosphoric acid and sulfuric acid of about 1:3 is often used as the corrosi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/005H01L33/06H01L2933/0008
Inventor 张威王江波
Owner HC SEMITEK CORP