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edge emitting semiconductor laser

A semiconductor and laser technology, applied in the field of edge-emitting semiconductor lasers, can solve problems such as difficulty

Active Publication Date: 2018-03-30
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to satisfy both requirements

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Embodiment Construction

[0047] exist Figure 1A and 1B A first embodiment of an edge-emitting semiconductor laser is shown in . Figure 1A shown along the Figure 1B A cross-section along the line A-B of the top view shown in .

[0048] The edge-emitting semiconductor laser has a semiconductor body 10 in which a waveguide region 4 is contained. The waveguide region 4 comprises a first waveguide layer 2A and a second waveguide layer 2B, between which an active layer 3 is arranged for generating laser radiation.

[0049] The active layer 3 of an edge-emitting semiconductor laser can in particular be a single or multiple quantum well structure.

[0050] The waveguide layers 2A, 2B with the active layer 3 embedded therebetween constitute a waveguide region 4 . The waveguide region 4 is arranged between the first cladding layer 1A and the second cladding layer 1B behind the waveguide region 1B in the growth direction of the semiconductor body 10 . The first cladding layer 1A is arranged on the side of...

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Abstract

An edge-emitting semiconductor laser is proposed having a semiconductor body (10) with a waveguide region (4), wherein the waveguide region (4) has a first waveguide layer (2A), a second waveguide layer (2B) and An active layer (3) for generating laser radiation (17) arranged between a first waveguide layer (2A) and a second waveguide layer (2B), the waveguide region (4) being arranged in the first cladding layer (1A ) and the second cladding layer (1B) behind the waveguide region (4) along the growth direction of the semiconductor body (10), in the semiconductor body (10), there is a structure for selecting the emission emitted by the active layer (3) A phase structure (6) of a transverse mode of laser radiation, wherein the phase structure (6) comprises at least one groove (7) extending from the surface (5) of the semiconductor body (10) to the second cladding ( 1B), at least one first intermediate layer (11) consisting of a semiconductor material different from that of the second cladding layer (1B) is embedded in the second cladding layer (1B), and the grooves (7) are formed from The surface (5) of the semiconductor body (10) extends at least partially into the first intermediate layer (11).

Description

[0001] The application of the present invention is a divisional application of the invention patent application with the application date of August 25, 2010, the application number "201080049541.3", and the invention name "Edge Emitting Semiconductor Laser". technical field [0002] The invention relates to an edge-emitting semiconductor laser having a phase-structured region for selecting a lasing transverse mode. [0003] This application claims priority from German patent applications 10 2009 051 348.5 and 10 2009 056 387.3, the disclosure content of which is hereby incorporated by reference. Background technique [0004] Edge-emitting semiconductor lasers for high output powers are usually designed as wide-contact stripe lasers, the active region can have a width of, for example, 100 μm or more. Due to the relatively large lateral extent of the active region, it is often possible to oscillate a plurality of lasing transverse modes in such semiconductor lasers. The multi...

Claims

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Application Information

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IPC IPC(8): H01S5/10
CPCH01S5/0655H01S5/10H01S5/2004H01S5/2036H01S5/2081H01S5/2086H01S5/209H01S5/3211H01S5/3213H01S5/4031H01S2301/166H01S2301/176H01S2301/18H01S5/1082H01S5/04256H01S5/2018H01S5/323H01S5/02251
Inventor 克里斯蒂安·劳尔阿尔瓦罗·戈麦斯-伊格莱西亚斯
Owner OSRAM OPTO SEMICON GMBH & CO OHG
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