Glass laminate and method for manufacturing electronic device
A technology of electronic devices and laminates, which is applied in semiconductor/solid-state device manufacturing, electronic equipment, electric solid-state devices, etc., and can solve problems such as inability to peel off glass substrates
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Embodiment 1
[0122] One main surface of the support substrate is cleaned with pure water and then UV-washed. Furthermore, on the cleaned surface, magnetron sputtering (heating temperature 300°C, film formation pressure 5mTorr, power density 4.9W / cm 2 ) to form a TiN (titanium nitride) layer (corresponding to an inorganic layer) with a thickness of 20 nm to obtain a support substrate with an inorganic layer.
[0123] Next, one main surface of the glass substrate was cleaned with pure water, and then cleaned with UV. After cleaning the exposed surface of the inorganic layer of the support substrate with the inorganic layer and the cleaned surface of the glass substrate with an aqueous alkali solution and water, the cleaned surfaces are cleaned at room temperature using a vacuum press. Bonded to obtain glass laminated body A1.
[0124] In the obtained glass laminate A1, the support substrate with the inorganic layer and the glass substrate were in close contact without generating bubbles, t...
Embodiment 2
[0129] A glass laminate A2 was produced in the same procedure as in Example 1 except that an AlN (aluminum nitride) layer was formed in the following procedure instead of forming a TiN layer.
[0130] (Procedures for making the AlN layer)
[0131] One main surface of the support substrate is cleaned with pure water and then UV-washed. Furthermore, on the cleaned surface, magnetron sputtering (heating temperature 300°C, film formation pressure 5mTorr, power density 4.9W / cm 2 ) to form an AlN layer (corresponding to an inorganic layer) with a thickness of 20 nm to obtain a support substrate with an inorganic layer.
[0132] Using the glass laminate A2 instead of the glass laminate A1, the glass substrate was peeled in the same procedure as in Example 1, and as a result, the support substrate with the inorganic layer and the glass substrate could be peeled (separated). There was no residue of the inorganic layer on the surface of the peeled glass substrate.
Embodiment 3
[0134] A glass laminate A3 was produced in the same procedure as in Example 1 except that a WSi (tungsten silicide) layer was formed in the following procedure instead of forming a TiN layer.
[0135] (Procedure of making WSi layer)
[0136] One main surface of the support substrate is cleaned with pure water and then UV-washed. Then, on the cleaned surface, magnetron sputtering (room temperature, film formation pressure 5mTorr, power density 4.9W / cm 2 ) to form a WSi layer (corresponding to an inorganic layer) with a thickness of 20 nm to obtain a support substrate with an inorganic layer.
[0137] Using the glass laminate A3 instead of the glass laminate A1, the glass substrate was peeled in the same procedure as in Example 1, and as a result, the support substrate with the inorganic layer and the glass substrate could be peeled (separated). There was no residue of the inorganic layer on the surface of the peeled glass substrate.
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Abstract
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