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Reaction chamber and epitaxial growth equipment

A reaction chamber and corresponding technology, applied in the field of reaction chamber and epitaxial growth equipment, can solve problems such as large temperature deviation, difficulty in temperature control, and reduction of process uniformity, so as to improve temperature uniformity, uniform magnetic field distribution, and improve The effect of process uniformity

Active Publication Date: 2017-06-06
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the above-mentioned CVD equipment inevitably has the following problems in practical applications: first, if the heating coil 6 uses induction heating to heat the tray 2, in the process of heating the tray 2, since there is no connection between the induction coil 3 and the heating coil 6 Set the constraint relationship between the winding direction and the phase of the radio frequency current. If the winding direction of the two is the same, that is, both are right-handed or left-handed, the phases of the radio-frequency currents that are respectively passed into the two should differ by 180° If the winding directions of the two are opposite, then the phases of the RF currents that are fed into the two are the same, which makes the alternating magnetic fields generated by the induction coil 3 and the heating coil 6 possibly cancel each other out, for example, if the two When the winding directions of the two are the same, and the phases of the RF currents fed to the two are the same, the alternating magnetic fields generated by the two will cancel each other in the superimposed area, resulting in a magnetic induction distributed in the superimposed area. The intensity is significantly lower than the magnetic induction intensity of other regions of the reaction chamber, resulting in a large temperature deviation between the temperature of the part of the tray 2 corresponding to the overlapping region and the part corresponding to other regions, thereby reducing the uniformity of the process
[0007] Second, if the heating coil 6 heats the tray 2 by means of heat radiation, the above-mentioned constraint relationship does not exist between the induction coil 3 and the heating coil 6 at all, which makes it difficult to obtain the induction coil 3 and the heating coil 6 respectively. 2. Radial temperature uniform heating power value, which brings difficulty to temperature control in the heating process

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  • Reaction chamber and epitaxial growth equipment
  • Reaction chamber and epitaxial growth equipment
  • Reaction chamber and epitaxial growth equipment

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Embodiment Construction

[0028] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the reaction chamber and epitaxial growth equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0029] Please see Figure 4 , Figure 4Schematic diagram of the structure of the reaction chamber provided by the embodiment of the present invention. The reaction chamber includes a plurality of trays 10 , an alternating power supply, an induction coil 20 and an inlet pipe 30 . Wherein, a plurality of trays 10 are made of magnetic conductor materials, and are vertically spaced in the reaction chamber; the induction coil 20 includes a first induction coil 21 and a second induction coil 22, wherein the first induction coil 21 is wound around the reaction chamber. Outside the side wall of the chamber; the second induction coil 22 is wound in the reaction chamber and penetrates through the plur...

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Abstract

The invention provides reaction cavity and epitaxial growth equipment. The equipment comprises a plurality of trays, an alternating power supply, and induction coils. The alternating power supply is used to supply alternating current to the induction coils. The induction coils comprise a first induction coil and a second induction coil. The first induction coil is winded around the external side of a reaction cavity. The second induction coil is winded in the reaction cavity and goes through a plurality of trays in the vertical direction. The winding directions of the first induction coil and the second induction coil are identical. The phase difference of the currents provided by the alternating power supply in the first induction coil and the second induction coil is 180 degrees. Or the winding directions of first induction coil and the second induction coil are opposite, and identical alternating currents are provided for the first induction coil and the second induction coil respectively. Thus the directions of the alternating magnetic fields generated by the first induction coil and the second induction coil in the trays can be maintained in the same direction, and the temperature uniformity of each area in the trays can be improved.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a reaction chamber and epitaxial growth equipment. Background technique [0002] The principle of using Vapor Phase Epitaxy (hereinafter referred to as VPE) equipment or Metal Organic Chemical Vapor Deposition (hereinafter referred to as MOCVD) equipment to prepare thin films is to combine organic compounds of II or III elements with IV or The hydrides of group V elements are mixed and then passed into the reaction chamber. The mixed gas undergoes thermal decomposition reaction on the heated substrate surface, and epitaxially grows on the substrate surface to form a thin film. [0003] figure 1 It is a schematic diagram of the structure of MOCVD equipment. see figure 1 , the MOCVD equipment includes a reaction chamber 1, in which a plurality of trays 2 made of high-temperature-resistant magnetic conductor materials such as graphite are arranged, and the plur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/46
CPCC23C16/46
Inventor 涂冶
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD