Room temperature terahertz detector based on gallium nitride high electron mobility transistor and its preparation method
A high electron mobility, terahertz detector technology, applied in the field of terahertz signal detection, can solve the problems of low detector sensitivity and high equivalent noise power, and achieve the effect of improving sensitivity, improving responsivity, and improving coupling efficiency
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[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0024] A room-temperature terahertz detector based on gallium nitride high electron mobility transistors, such as figure 1 , 2 As shown, it includes a gallium nitride high electron mobility transistor and a nano-antenna 4, both of which are integrated on a gallium nitride two-dimensional electron gas-based epitaxial wafer. Such as figure 2 As shown, the epitaxial wafer includes a silicon substrate layer 10 , a buffer layer 9 , a gallium nitride channel layer 8 , a spacer layer 7 , an aluminum gallium nitride layer 6 and a cap layer 5 from bottom to top. The source electrode 1 and the drain electrode 3 are connected to the gallium nitride channel through metal Ti / Al / Ni / Au forming an ohmic contact with the gallium nitride. The gate 2 is located above the two-dimensional electron gas channel between the source and the drain, and the nano-antenna 4 is...
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