Room temperature terahertz detector based on gallium nitride high electron mobility transistor and its preparation method

A high electron mobility, terahertz detector technology, applied in the field of terahertz signal detection, can solve the problems of low detector sensitivity and high equivalent noise power, and achieve the effect of improving sensitivity, improving responsivity, and improving coupling efficiency

Inactive Publication Date: 2017-01-18
侯皓文
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the detector has low sensitivity and high equivalent noise power, and the performance of the detector needs to be further improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Room temperature terahertz detector based on gallium nitride high electron mobility transistor and its preparation method
  • Room temperature terahertz detector based on gallium nitride high electron mobility transistor and its preparation method
  • Room temperature terahertz detector based on gallium nitride high electron mobility transistor and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] A room-temperature terahertz detector based on gallium nitride high electron mobility transistors, such as figure 1 , 2 As shown, it includes a gallium nitride high electron mobility transistor and a nano-antenna 4, both of which are integrated on a gallium nitride two-dimensional electron gas-based epitaxial wafer. Such as figure 2 As shown, the epitaxial wafer includes a silicon substrate layer 10 , a buffer layer 9 , a gallium nitride channel layer 8 , a spacer layer 7 , an aluminum gallium nitride layer 6 and a cap layer 5 from bottom to top. The source electrode 1 and the drain electrode 3 are connected to the gallium nitride channel through metal Ti / Al / Ni / Au forming an ohmic contact with the gallium nitride. The gate 2 is located above the two-dimensional electron gas channel between the source and the drain, and the nano-antenna 4 is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the terahertz signal detection field, and especially to a room temperature terahertz detector based on a gallium nitride high electron mobility transistor and a preparation method thereof. The detector includes a gallium nitride high electron mobility transistor provided with a source electrode, a gate electrode, and a drain electrode, and also includes a nanometer antenna. The nanometer antenna is located between the source electrode and the drain electrode of the gallium nitride high electron mobility transistor and at one side of the gate electrode. The nanometer antenna is arranged at a distance from the gate electrode. One side of the gate electrode, adjacent to the nanometer antenna, is provided with a protrusion array having the corresponding shape and interval as the nanometer antenna. The protrusion array and the nanometer antenna form a tip-to-tip structure for increasing a terahertz electric field. The room temperature terahertz detector based on the gallium nitride high electron mobility transistor employs a unique nanometer antenna structure and combines a special gate electrode structure, effectively improves the coupling efficiency of the detector to a terahertz electromagnetic wave, and realizes the detection of the room temperature of the terahertz electromagnetic wave, and the high sensitive and low equivalent noise power.

Description

technical field [0001] The invention relates to the field of terahertz signal detection, in particular to a room temperature terahertz detector based on gallium nitride high electron mobility transistor and a preparation method thereof. Background technique [0002] Terahertz generally refers to electromagnetic waves with a frequency (100GHz-10THz) between infrared and microwave. Terahertz electromagnetic waves have the characteristics of safety, strong penetrating power to non-polar media, high spatial resolution and high temporal resolution, so it has important application prospects in nondestructive testing, medical imaging, safety inspection, material characterization and deep space communication. Currently used terahertz detectors either need to work at low temperature, or have slow response speed, or low responsivity, or are bulky. Therefore, it is urgent to develop a terahertz detector that works at room temperature, is small in size, can be integrated, has fast resp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/112H01L31/02H01L31/0224H01L31/18
CPCH01L31/02H01L31/022408H01L31/112H01L31/1856Y02P70/50
Inventor 侯皓文
Owner 侯皓文
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap