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Image sensor pixel cell with switched deep trench isolation structure

A technology of pixel unit and image charge, applied in electrical components, semiconductor devices, electro-solid devices, etc., can solve problems such as unwanted signal transmission

Active Publication Date: 2017-05-31
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As pixel cell sizes continue to decrease, the issue of pixel cell crosstalk and unwanted signal transmission between pixel cells continues to become a growing challenge

Method used

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  • Image sensor pixel cell with switched deep trench isolation structure
  • Image sensor pixel cell with switched deep trench isolation structure
  • Image sensor pixel cell with switched deep trench isolation structure

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Embodiment Construction

[0012] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the specific details need not be employed to practice the present invention. In other instances, well-known materials or methods have not been described in detail in order not to obscure the present invention.

[0013] Reference throughout this specification to "one embodiment," "an embodiment," "an example," or "an example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example includes In at least one embodiment of the invention. Thus, appearances of the phrases "in one embodiment," "in an embodiment," "an example," or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures or character...

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Abstract

The invention relates to an image sensor pixel unit with a switchable deep trench isolation structure. A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. a deep trench isolation DTI structure disposed in the semiconductor material isolating the first region on one side of the DTI structure from a second region of the semiconductor material on the other side of the DTI structure, A dielectric layer is lined inside the DTI structure. The doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Description

technical field [0001] The present invention relates generally to semiconductor processing. More specifically, examples of the invention relate to semiconductor processing of image sensor pixel cells. Background technique [0002] The image capture device includes an image sensor and an imaging lens. The imaging lens focuses light onto the image sensor to form an image, and the image sensor converts the light into an electrical signal. Electrical signals are output from the image capture device to other components of the host electronics system. For example, an electronic system can be a mobile phone, a computer, a digital camera, or a medical device. [0003] There is a continuing need to reduce the size of image sensors, which results in smaller pixel cells for image sensors with the same resolution. As pixel cell sizes continue to decrease, the issues of pixel cell crosstalk and unwanted signal transmission between pixel cells continue to become more and more of a cha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14643H01L27/14601H01L27/1463H01L27/0928
Inventor 胡信中杨荣生陈刚霍华德·E·罗兹真锅宗平戴森·幸志·戴
Owner OMNIVISION TECH INC