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Substrate processing device and substrate processing method

A technology for processing equipment and substrates, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of poor film material uniformity, difficulty in controlling film quality, uneven plasma density, etc. The effect of prolonging the cycle

Active Publication Date: 2015-02-25
JUSUNG ENG
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  • Claims
  • Application Information

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Problems solved by technology

[0017] The density of the plasma formed over the entire area of ​​the susceptor 30 is not uniform, so that the uniformity of the thin film material deposited on the substrate (W) becomes poor, and it is difficult to control the quality of the thin film
[0018] Also, since the plasma is formed over the entire area of ​​the susceptor 30, the thickness of the source material deposited on the chamber 10 and the thickness of the source material deposited on the substrate (W) may rapidly increase such that the chamber 10's cleaning cycle shortened

Method used

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  • Substrate processing device and substrate processing method
  • Substrate processing device and substrate processing method
  • Substrate processing device and substrate processing method

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Embodiment Construction

[0054] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0055] figure 2 is a perspective view illustrating the substrate processing apparatus according to the first embodiment of the present invention. image 3 is in figure 2 A plan view of the chamber lid shown in . Figure 4 is shown along the image 3 Sectional view of the chamber lid of II'. Figure 5 is shown along the image 3 Sectional view of the chamber lid of II-II'. Image 6 is shown in figure 2 Plan view of the gas distribution area and gas pumping area defined on the substrate holder shown in ;

[0056] see Figure 2 to Figure 6 , the substrate processing apparatus according to the first embodiment of the present invention may include: a processing chamber 110; a substrate supporter 120 disposed at the bottom of the processing chamber 110, wherein the substrate supporter 120 supports at least one substrate thereon (W ); the cha...

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Abstract

The present invention relates to a substrate processing device and a substrate processing method capable of preventing damage of a substrate due to plasma. The substrate processing device, according to the present invention, comprises: a process chamber; a substrate support part mounted on the bottom surface of the process chamber so as to support at least one substrate; a chamber lid covering the upper part of the process chamber such that the chamber lid faces the substrate support part; and a gas spraying part which is mounted on the chamber lid for spraying a source gas onto a source gas spraying area on the substrate support part, spraying a reaction gas onto a reaction gas spraying area which is spatially separated from the source gas spraying area, and spraying a purge gas between the source gas spraying area and the reaction gas spraying area.

Description

technical field [0001] The present invention relates to an apparatus and method for processing a substrate for depositing a thin film on the substrate. Background technique [0002] Generally, in order to manufacture solar cells, semiconductor devices, and flat panel display devices, it is necessary to form predetermined thin film layers, thin film circuit patterns, or optical patterns on the surface of a substrate. Therefore, it is necessary to perform semiconductor manufacturing processes such as a thin film deposition process of depositing a thin film of a predetermined material on a substrate, a photo process of selectively exposing a thin film by using a photosensitive material, and a patterning process of selectively removing an exposed portion of a thin film. etching process. [0003] Semiconductor fabrication processes are performed within substrate processing equipment designed to be optimal for the situation. Recently, a deposition or etching process is generally...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L31/18
CPCH01L31/18H01J37/3244C23C16/45551H01J37/32091C23C16/45536C23C16/45544C23C16/4584C23C16/50H01L21/205H01L21/0262
Inventor 郭在燦
Owner JUSUNG ENG
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