Method for improving deposition uniformity of thin films

Abstract

The invention provides a method for improving the deposition uniformity of thin films. The method comprises the following steps that a plurality of pieces of wafers are borne by using a wafer cassette; the wafer cassette is provided with a head part and a tail part, and the multiple pieces of wafers are arranged between the head part and the tail part of the wafer cassette; blocking and controlling sheets are arranged between the multiple pieces of wafers and the head part of the wafer cassette as well as / or the multiple pieces of wafers and the tail part of the wafer cassette; and the wafercassette bearing the wafers and the blocking and controlling sheets is placed in a reaction furnace tube and subjected to thin film deposition, wherein the blocking and controlling sheets have an uneven surface structure. According to the method for improving the deposition uniformity of the thin films, the blocking and controlling sheets with the uneven surface structure are guided in and replace even blocking and controlling sheets in the prior art, the gas adsorption capacity is improved by increasing the adsorption area of the blocking and controlling sheets, and the edge thickness of a product adjacent to the blocking and controlling sheets can be reduced effectively, thus the film thickness uniformity of a chip can be improved effectively, and a curve of the yield loss of the edge of the wafer cassette position is smoothed to improve the product yield.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for improving the uniformity of film deposition. Background technique [0002] Atomic layer deposition (ALD, atomic layer deposition) is compared with general low pressure chemical vapor deposition (LPCVD, low pressure chemical vapor deposition), which deposits substances layer by layer in the form of a single atomic film on the surface of the substrate. Self-limiting chemisorption reaction (self-limiting chemisorption), that is, no further deposition reaction after deposition saturation, and no over-saturated adsorption due to too much special gas, so it has very good step coverage and uniformity, and can be precisely controlled desired film thickness. [0003] However, as the line width of the manufacturing process continues to shrink, the load effect reflected in the product thickness becomes more obvious, which also makes it more difficult to control ...

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Problems solved by technology

[0005] In view of the prior art described above, the purpose of the present invention is to provide a method for improving the uniformity of film deposition, which is used to improve the problem of uneven film deposition thickness in low-pressure furnace tubes in the prior art

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