VDMOS (Vertical Diffused Metal Oxide Semiconductor) device and manufacturing method thereof
A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limited effect, and achieve the effect of reducing FOM value and enhancing dynamic performance
Inactive Publication Date: 2015-03-04
NO 47 INST OF CHINA ELECTRONICS TECH GRP
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Problems solved by technology
[0004] At present, in the process of VDMOS device processing, although the switching performance of the device can be improved by optimizing the process parameters, the effect is very limited.
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[0021] Such as figure 1 and figure 2 Shown is a VDMOS device according to an embodiment of the present invention, which has an N-type silicon substrate and an N-type epitaxial layer formed on the silicon substrate. The surface of the epitaxial layer is etched by wet and dry processes to form trenches, so that the sidewalls of the trenches are smooth and the angle between the sidewalls and the bottom wall is 90-100°, and the body oxide layer is deposited in the trenches . The internal oxide layer deposited into the groove has a shape corresponding to the groove, and the cross section of the internal oxide layer can be rectangular, square or polygonal. On the epitaxial layer, the gate dielectric layer and the polysilicon in the gate region are deposited in sequence, and the material of the gate dielectric layer is SiO 2 , you can also choose SrTiO 3 , HfO 2 , ZrO 2 Wait. The material of the gate area is gate polysilicon, and metal can also be selected. The gate dielectr...
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Abstract
The invention provides a manufacturing method of a VDMOS (Vertical Diffused Metal Oxide Semiconductor) device. The manufacturing method comprises the following steps: forming a groove in the surface of the epitaxial layer of a substrate, depositing an in vivo oxide layer in the groove, forming a grid electrode bordered to the in vivo oxide layer on the epitaxial layer, forming source electrodes on the two opposite sides of the in vivo oxide layer in such a manner that a certain distance is formed between each source electrode and the in vivo oxide layer on the epitaxial layer, and forming a drain electrode on the substrate. Moreover, the invention further provides a VDMOS device manufactured according to the method. According to the VDMOS device and the manufacturing method thereof provided by the invention, only the groove needs to be etched on the surface of the epitaxial layer, the in vivo oxide layer is deposited in the groove, the external structure and shape of the device do not need to be changed, and integration can be realized by adopting the conventional manner. Under the condition without influencing the reverse breakdown voltage of the device, the FOM (Figure of Merit) value of the device is effectively reduced, and the dynamic performance of the device is improved.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a VDMOS structure with excellent dynamic performance and a manufacturing method thereof. Background technique [0002] VDMOS devices have the advantages of high input impedance, small input current, low driving power, simple driving circuit, high switching speed, good frequency characteristics, and good thermal stability. In particular, it has a negative temperature coefficient and does not have the secondary Secondary breakdown problem, large safe working area, it is widely used in the field of automotive electronics, motor drive, industrial control, motor speed regulation, switching power supply, energy-saving lamps, inverter audio amplification, high-frequency oscillator and uninterruptible power supply . [0003] An important parameter that can characterize the performance of power VDMOS devices is called the quality factor FOM (figure of merit), which is equal to the on-resist...
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IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66712H01L29/06H01L29/7802
Inventor 郑莹吴会利马洪江
Owner NO 47 INST OF CHINA ELECTRONICS TECH GRP