Nitrogen-doped nano-film material applied to quick high-stability phase transition storage and preparation method

A technology of nano-film material and phase change memory, which is applied in the field of storage materials in the field of microelectronics technology, can solve the problem of low thermal stability of alloys, achieve high crystallization temperature and activation energy, increase crystalline resistance, and achieve high crystallization temperature. improved effect

Inactive Publication Date: 2015-03-04
JIANGSU UNIV OF TECH
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Problems solved by technology

[0004] The purpose of the present invention is to overcome Sn 15 Sb 85 The shortcomings of low thermal stability of alloys, providing a nitrogen-doped Sn that can improve the stability of phase change materials while reducing its operating power consumption 15 Sb 85 Nano phase change thin film material and preparation method thereof

Method used

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  • Nitrogen-doped nano-film material applied to quick high-stability phase transition storage and preparation method
  • Nitrogen-doped nano-film material applied to quick high-stability phase transition storage and preparation method

Examples

Experimental program
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Embodiment 1

[0024] Nitrogen-doped Sn prepared in this example 15 Sb 85 The structure of the nano phase change thin film material is specifically

[0025] sn 15 Sb 85 N 1 .

[0026] The preparation steps are:

[0027] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities;

[0028] a) strong ultrasonic cleaning in ethanol solution for 10 minutes;

[0029] b) Blow dry the remaining ethanol liquid with a hair dryer on a warm gear for about 30 minutes.

[0030] 2. Preparation of Sn by radio frequency sputtering method 15 Sb 85 N 1 Film preparation:

[0031] a) Install Sn 15 Sb 85 Sputtering target material, the purity of the target material reaches 99.999% (atomic percentage), and the background vacuum is pumped to 5×10 -4 Pa;

[0032] b) Set the sputtering power to 30W;

[0033] c) Using high-purity Ar and high-purity N 2 As the sputtering gas (the volume percent reaches 99.999%), the Ar gas flow rate is ...

Embodiment 2

[0038] Prepare the SnSbNx nano phase change thin film material of the present embodiment, its concrete structure is respectively Sn 15 Sb 85 N 2 , Sn 15 Sb 85 N 3 and Sn 15 Sb 85 N 4 , the preparation method is the same as Example 1, and the nano-Sn 15 Sb 85 N 2 , Sn 15 Sb 85 N 3 and Sn 15 Sb 85 N 4 The sputtering time of the nano phase change thin film material is 100s. Just prepare Sn 15 Sb 85 N 2 The Ar gas flow rate set by the nano phase change thin film material is 28sccm, and the N 2 The flow rate is 2 sccm, and the film preparation methods of other structures can be deduced by analogy.

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Abstract

The invention discloses a nitrogen-doped nano-film material applied to a quick high-stability phase transition storage. The nitrogen-doped nano-film material is characterized in that the chemical fomula is Sn15Sb85Nx, wherein x is the nitrogen flow rate based on the unit of sccm; the nitrogen-doped Sn15Sb85 is prepared by the room-temperature magnetron sputtering method; argon and nitrogen are charged at the same time during performing magnetron sputtering and depositing for the Sn15Sb85 film. The preparation method is characterized in that nitrogen-doped Sn15Sb85 nano phase transition thin materials with different N atom contents can be obtained by controlling the flow rate of Ar and N2; other preparation conditions cannot be ignored, which certainly influences the content and size of N atoms in the final nitrogen-doped Sn15Sb85 nano phase transition film material. The nitrogen-doped Sn15Sb85 nano film material can be applied to the phase transition storage and is high in crystallization temperature and crystallization resistance, and the heat stability of PCRAM can be greatly improved.

Description

technical field [0001] The invention relates to storage materials in the field of microelectronics technology, in particular to a nitrogen-doped Sn material for fast, low power consumption and high stability. 15 Sb 85 Nano phase change thin film material and preparation method thereof. Background technique [0002] Phase change memory (PCRAM) uses the material to switch back and forth from the crystalline state to the amorphous state, and the resistance also changes between high resistance and low resistance. The two resistance states represent "0" and "1" respectively, so as to realize information storage. the goal of. It has the advantages of non-volatility, long cycle life, fast reading speed, good stability, high-density storage, low power consumption and strong embeddability, so it is considered to be the most promising next-generation storage technology. [0003] Studies have shown that, compared with traditional Ge 2 Sb 2 Te 5 Compared with phase change material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 袁丽胡益丰朱小芹吴卫华薛建忠张建豪
Owner JIANGSU UNIV OF TECH
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