Diode with floating island structure
A diode and floating island technology, applied in the field of power semiconductor devices, can solve the problems of increasing the conduction voltage drop, etc., and achieve the effects of reduced conduction voltage, short reverse recovery time, and good temperature characteristics
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[0022] Example 1
[0023] Such as Figure 4 As shown, this example includes a cathode 7, an N-type semiconductor substrate 6 located on the upper layer of the cathode 7, an N-type semiconductor drift region 5 located on the upper layer of the N-type semiconductor substrate 6, and a gate oxide layer located on the upper layer of the N-type semiconductor drift region 5. 2 and the anode 1 located on the upper layer of the gate oxide layer 2; the gate oxide layer 2 and the trench structure; an N-type semiconductor region 3 is provided between the gate oxide layers 2 on both sides of the trench; in the N-type semiconductor drift region A plurality of doped regions containing P-type semiconductor doped regions 4 are provided in 5 to form a floating island structure.
[0024] The working principle of this example is:
[0025] In the blocking state, the P-type floating island and the N-type semiconductor drift region 5 form a built-in potential to form an electronic barrier, preventing elec...
Example Embodiment
[0026] Example 2
[0027] Such as Figure 5 As shown, the structure of this embodiment is based on embodiment 1 with a first heavily doped N-type semiconductor region 8 between anode 1 and N-type semiconductor region 3. The working principle of this embodiment is the same as that of embodiment 1. The ohmic contact resistance can be further reduced.
Example Embodiment
[0028] Example 3
[0029] Such as Image 6 As shown, the structure of this embodiment is based on Embodiment 2 with a second heavily doped N-type semiconductor region 9 between the anode 1 and the N-type semiconductor region 3. The working principle of this embodiment is the same as that of Embodiment 1. The ohmic contact resistance can be further reduced.
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