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Diode with floating island structure

A diode and floating island technology, applied in the field of power semiconductor devices, can solve the problems of increasing the conduction voltage drop, etc., and achieve the effects of reduced conduction voltage, short reverse recovery time, and good temperature characteristics

Inactive Publication Date: 2015-03-11
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the leakage current of the Schottky junction at high temperature and reverse bias is still greater than that of the conventional PN junction.
Moreover, even with a Schottky junction, the Schottky barrier increases the conduction voltage drop to a certain extent

Method used

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  • Diode with floating island structure
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Such as Figure 4 As shown, this example includes a cathode 7, an N-type semiconductor substrate 6 located on the upper layer of the cathode 7, an N-type semiconductor drift region 5 located on the upper layer of the N-type semiconductor substrate 6, and a gate oxide layer located on the upper layer of the N-type semiconductor drift region 5 2 and the anode 1 located on the upper layer of the gate oxide layer 2; the gate oxide layer 2 and the trench structure; an N-type semiconductor region 3 is arranged between the gate oxide layer 2 on both sides of the trench; in the N-type semiconductor drift region 5 is provided with a plurality of doped regions including P-type semiconductor doped regions 4 to form a floating island structure.

[0024] This example works as follows:

[0025] In the blocking state, the P-type floating island and the N-type semiconductor drift region 5 form a built-in potential, forming an electron potential barrier, which prevents electrons from f...

Embodiment 2

[0027] Such as Figure 5 As shown, the structure of this example is that a first heavily doped N-type semiconductor region 8 is arranged between the anode 1 and the N-type semiconductor region 3 on the basis of Embodiment 1. The working principle of this example is the same as that of Embodiment 1. The ohmic contact resistance can be further reduced.

Embodiment 3

[0029] Such as Figure 6 As shown, the structure of this example is that a second heavily doped N-type semiconductor region 9 is arranged between the anode 1 and the N-type semiconductor region 3 on the basis of Embodiment 2. The working principle of this example is the same as that of Embodiment 1. The ohmic contact resistance can be further reduced.

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Abstract

The invention belongs to the technical field of power semiconductor devices, and relates to a diode with a floating island structure. The diode comprises an N-type semiconductor substrate, a cathode arranged at the bottom of the N-type semiconductor substrate, an N-type semiconductor drift region arranged on the upper layer of the N-type semiconductor substrate, a gate oxide layer arranged on the upper layer of the N-type semiconductor drift region, and an anode arranged on the upper layer of the gate oxide layer, wherein the gate oxide layer is of a trench gate structure, and an N-type semiconductor region is arranged between the portions, on the two sides of a trench, of the gate oxide layer. The diode is characterized in that a plurality of doping regions including P-type semiconductor doping regions are arranged in the N-type semiconductor drift region, and therefore the floating island structure is formed. The diode has the advantages that conductive voltage is reduced, the reverse recovery time is short, and the temperature characteristic is good. The diode is particularly suitable for trench type diodes.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a diode which utilizes an accumulation layer and a P floating island to jointly control a conduction channel. Background technique [0002] Power diodes are widely used in modern power electronic circuits, such as conversion, control, drive and other fields. It is often used together with transistors (such as IGBT, VDMOS, etc.) to control the flow of current. [0003] In the field of high-voltage applications, P+ / N rectifier diodes are mainly used, and their reverse leakage current is small. Due to conductance modulation, the conductance voltage drop is low even at high voltages. However, due to the carrier storage effect, its reverse recovery time is relatively long, and its application in the high-frequency field is limited. [0004] In low-voltage applications, Schottky diodes are mainly used. Schottky diodes have the advantages of low condu...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/8725H01L29/0623H01L29/8611H01L29/0603
Inventor 李泽宏陈钱刘永伍济郭绪阳
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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