Unlock instant, AI-driven research and patent intelligence for your innovation.

Accurate measuring method for CMP (chemical mechanical polishing) rate

A technology of grinding rate and precise measurement, which is applied in the direction of grinding devices, grinding machine tools, and parts of grinding machine tools, etc. It can solve problems such as unstable results, unreachable results, and slow speed, so as to reduce unstable effects and measure accurately. Accuracy improvement, the effect of improving accuracy

Inactive Publication Date: 2015-03-18
CSMC TECH FAB2 CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can better simulate the uniformity of the entire wafer, but the speed of this test machine is relatively slow, and there are still 24 points on the edge, accounting for 49% of the number, the test results are still unstable, still up to less than ideal requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Accurate measuring method for CMP (chemical mechanical polishing) rate
  • Accurate measuring method for CMP (chemical mechanical polishing) rate
  • Accurate measuring method for CMP (chemical mechanical polishing) rate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The method of the invention is to set the measuring poles on the surface of the wafer as the grinding rate measuring points of the APC system, and the APC system provides the grinding time according to these measuring points set on the product to control the work of the grinding machine. Considering the circularity of the grinding working form, it will have a better effect if the measuring points cover as many "circumferences" as possible.

[0020] Such as Figure 5 , which is an embodiment of the present invention, on a certain diameter of the wafer (that is, any straight line passing through the center line), 49 points are evenly selected, including at least one center point, and the remaining points are between two points of the center point. There are 24 points on each side, and the distance between two adjacent points is the same, and every two points that are symmetrical on both sides form a group, a total of 24 groups. Therefore, the method of this patent can ad...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an accurate measuring method for a CMP (chemical mechanical polishing) rate, and relates to semiconductor production, in particular to a wafer CMP method. Based on an online wafer product multipoint measuring method, measuring poles are set on a wafer surface to serve as polishing rate measuring points of an APC system. The accurate measuring method is characterized in that the measuring poles are a plurality of points equidistantly arranged on an optional straight line penetrating the center of the wafer surface and include a central point. Oxide CMP online polishing rate measuring accuracy can be greatly improved, normal RR (rework ratio) rise and fall of Oxide CMP are really reflected, so that APC polishing time accuracy is improved, unstable influence on the final film thickness of a product is decreased, online product measuring yield is greatly improved, the rework ratio is decreased, effective time of a machine is prolonged, and on-chip uniformity can be checked by measurement.

Description

technical field [0001] The invention relates to semiconductor CMP technology, in particular to a monitoring method for on-line monitoring of grinding rate in Oxide CMP measuring machine mode. Background technique [0002] CMP (Mechanochemical Polishing Process) is an important process in semiconductor wafer manufacturing. The basic mechanism of grinding is as follows figure 1 As shown, the polishing head 1 exerts pressure on the wafer 2 to press on the polishing pad 3, and the polishing head 1 and the polishing pad 3 rotate relatively to achieve the effect of planarization (CMP). Of course, the abrasive feeding device is also included. 4. The injection of abrasives. This grinding method will make the grinding rate of each point on each concentric circle relative to the center position of the wafer be the same. [0003] Because the grinding time is calculated by the pre-measurement data of the product, the target value and the grinding rate of the machine, the precise grin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B49/00
CPCB24B49/006B24B37/005
Inventor 范怡平
Owner CSMC TECH FAB2 CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com