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Manganese-titanium co-doped indium fluosilicate luminescent film as well as preparation method and application thereof

A technology of indium fluorosilicate, light-emitting thin film, applied in the directions of light-emitting materials, chemical instruments and methods, semiconductor devices, etc.

Inactive Publication Date: 2015-03-25
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, manganese-titanium co-doped indium fluorosilicate light-emitting films that can be applied to thin-film electroluminescent displays have not been reported yet.

Method used

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  • Manganese-titanium co-doped indium fluosilicate luminescent film as well as preparation method and application thereof
  • Manganese-titanium co-doped indium fluosilicate luminescent film as well as preparation method and application thereof
  • Manganese-titanium co-doped indium fluosilicate luminescent film as well as preparation method and application thereof

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preparation example Construction

[0036] The preparation method of the manganese-titanium co-doped indium fluorosilicate luminescent film comprises the following steps:

[0037] S11. According to MeIn 2 Si 2 f 16 :xMn 4+ ,yTi 4+ The stoichiometric ratio of each element is weighed in MeF 2 , InF 3 , SiF 4 , MnF 4 and TiF 4 The powder is mixed evenly and sintered at 900°C to 1300°C to make a target.

[0038] Wherein, 0.01≤x≤0.05, 0.01≤y≤0.08, Me is Mg, Ca, Sr or Ba. Preferably, x is 0.02 and y is 0.04.

[0039] Of course, MeF can also be weighed according to the molar ratio 1:2:2:x:y 2 , InF 3 , SiF 4 , MnF 4 and TiF 4 Powder.

[0040] Preferably, the MeF 2 , InF 3 , SiF 4 , MnF 4 and TiF 4 The powder is mixed evenly and sintered at 1250°C to make a target.

[0041] Preferably, the manufactured target is cylindrical, with a diameter of 50mm and a thickness of 2mm.

[0042] S12. Put the target and the substrate into the vacuum chamber of the magnetron sputtering coating equipment, and adjus...

Embodiment 1

[0085] Choose MgF 2 , InF 3 , SiF 4 , MnF 4 and TiF 4 The powders, respectively 1mmol, 2mmol, 2mmol, 0.02mmol, 0.04mmol, were uniformly mixed and then sintered at 1250°C to form a ceramic target with a diameter of 50mm and a thickness of 2mm, and the target was loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate is set to 60mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 5.0×10 -4 Pa, the working gas flow rate of argon is 25 sccm, the pressure is adjusted to 2.0 Pa, and the substrate temperature is 500°C. By controlling the magnetron sputtering time to 20min, a luminescent film with a thickness of 240nm was obtained, annealed in a 0.01Pa vacuum furnace for 2h, and the annealing temperature was 600°C, and the chemical formula ...

Embodiment 2

[0089] Choose MgF 2 , InF 3 , SiF 4 , MnF 4 and TiF 4 Powders, respectively 1mmol, 2mmol, 2mmol, 0.01mmol, 0.01mmol, after uniform mixing, sintered at 900°C to form a ceramic target with a diameter of 50mm and a thickness of 2mm, and put the target into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate was set to 45mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa, the working gas flow rate of argon is 10 sccm, the pressure is adjusted to 0.2 Pa, and the substrate temperature is 250°C. By controlling the time of magnetron sputtering to 10min, a luminescent film with a thickness of 40nm is obtained, annealed in a 0.001Pa vacuum furnace for 1h, and the annealing temperature is 500°C, and the chemical formula is MgIn 2 Si...

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Abstract

The invention discloses a manganese-titanium co-doped indium fluosilicate luminescent film. The general chemical formula of the materials of the manganese-titanium co-doped indium fluosilicate luminescent film is shown as follows: MeIn2Si2F16:xMn<4+>, yTi<4+>, wherein MeIn2Si2F16 is a matrix, x is no less than 0.01 and no larger than 0.05, y is no less than 0.01 and no larger than 0.08, and Me is Mg, Ca, Sr or Ba. In the electroluminescence spectrum (EL) of the manganese-titanium co-doped indium fluosilicate luminescent film, a very strong glow peak exists in a 650nm wavelength region, and the manganese-titanium co-doped indium fluosilicate luminescent film can be applied to a film electroluminescence display. The invention also provides a preparation method and application of the manganese-titanium co-doped indium fluosilicate luminescent film.

Description

technical field [0001] The invention relates to the field of light-emitting materials, in particular to a manganese-titanium co-doped indium fluorosilicate light-emitting thin film, a preparation method thereof, a thin-film electroluminescence device and a preparation method thereof. Background technique [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. At present, the research on color and even full-color TFELD and the development of multi-band luminescent materials are the development direction of this subject. However, manganese-titanium co-doped indium fluorosilicate light-emitting films that can be applied to thin-film electroluminescent displays have not been reported yet. Contents of the invention [0003] Based on this, it is neces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/62H01L33/50
Inventor 周明杰陈吉星王平钟铁涛
Owner OCEANS KING LIGHTING SCI&TECH CO LTD