Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue
A metal nano, double-layer adhesive technology, applied in nanotechnology, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as peeling difficulties, lithography time process difficulties, excessive undercuts, etc., and achieves high accuracy, Broad application prospects, high efficiency and the effect of productivity
Inactive Publication Date: 2015-03-25
FUDAN UNIV
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[0003] There are also applications that require negative photoresist, mainly for the case where the semiconductor substrate material needs to be covered with a metal film. In this case, negative photoresist is a better choice in the process, because the stripping of the positive Photoresist will require a large area of exposure and a long photolithography time will cause difficulties in the process
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[0028] The main purpose of the present invention is to solve the bad stripping situation of negative photoresist, use a kind of PMMA / NEB double-layer photoresist combination, obtain good undercut degree (Undercut), obtain better stripping result, below in conjunction The accompanying drawings and specific implementations are taken as examples to describe the present invention in detail.
[0029] First, a silicon wafer is selected, and silicon dioxide with a thickness of 300 nanometers is grown on it as a sample substrate.
[0030] Spin-coat a positive photoresist PMMA, spin-coat 50 to 150 nanometer thick PMMA glue, and bake to make it harden, the baking temperature is 180 ℃, and the time is 60 minutes, is figure 1 shown in PMMA.
[0031] Spin-coat a negative photoresist NEB with a thickness of 150 to 300 nanometers, and then perform prebaking at a temperature of 100° C. for 2 minutes. Post-bake after photolithography, the temperature is 110°C, and the time is 2 minutes, whic...
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Abstract
The invention belongs to the technical field of the semiconductor nanometer process, and particularly relates to a method for manufacturing a metal nanometer slit through PMMA / NEB double-layer glue. The method includes the steps that a semiconductor substrate is coated with PMMA positive photoresist in a spinning mode, the semiconductor substrate is coated with NEB negative photoresist in a spinning mode, lines are photoetched, the NEB negative photoresist is developed and imaged, the position of the slit is defined, the etching process is conducted, the PMMA positive photoresist is etched on the surface of the substrate, metal is deposited at the portion where the PMMA positive photoresist is etched away, the stripping process at the last step is conducted, and therefore the structure of the metal nanometer slit is formed. According to the method, accuracy and reliability are high, repeatability is good, the small line width can be achieved, after the metal evaporation process and the stripping process are conducted, the metal slit of 10 nanometers is acquired, efficiency and productivity are high by the utilization of the method, and the method has the wide application prospect in nanometer optical structure manufacture.
Description
technical field [0001] The invention belongs to the technical field of semiconductor nanotechnology, and in particular relates to a method for making metal nano-slits by using double-layer glue. Background technique [0002] With the development of microelectronics technology, the feature size of integrated circuits continues to shrink, and the density of chip devices continues to increase. There is also a growing demand for improvements in new nanofabrication processes. Stripping is a standard process step for creating metal patterns. In the past nanoscale metal patterns were only fabricated on positive photoresists, especially PMMA, by using electron beam lithography. [0003] There are also applications that require negative photoresist, mainly for the case where the semiconductor substrate material needs to be covered with a metal film. In this case, negative photoresist is a better choice in the process, because the stripping of the positive Photoresist will require ...
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IPC IPC(8): H01L21/027B82Y40/00
CPCH01L21/0337B82Y40/00H01L21/0334
Inventor 陈宜方邹佳霖邵金海陆冰睿
Owner FUDAN UNIV