Method for eliminating polysilicon residue in polysilicon etching process
A technology of polysilicon and polysilicon gate, applied in the field of microelectronics, can solve problems such as polysilicon residues, achieve the effect of improving yield and eliminating polysilicon residues
Active Publication Date: 2018-09-04
SHANGHAI HUALI MICROELECTRONICS CORP
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[0008] The present invention solves the problem of polysilicon residues in the polysilicon etching process, thereby providing a technical proposal for a method for eliminating polysilicon residues in the polysilicon etching process
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[0028] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
[0029] like Figure 2 to Figure 4 As shown, the present invention provides the method for eliminating polysilicon residue in polysilicon etching process, comprises the following steps:
[0030] Step 1. Measure the thickness H1 of the original bottom anti-reflection layer e in the polysilicon gate a by using an optical line width measuring instrument (such as image 3 shown), and set the first etching time, which is shorter than the etching time of the polysilicon gate under normal conditions;
[0031] Step 2. Etching the polysilicon gate a for the first time according to the set first etching time, and obtaining the thickness H2 of the first etching;
[0032] Step 3. According to the thickness H1 of the original bottom anti-reflection layer e and the thickness H2 of the first etching, the proc...
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The invention discloses a method for removing polycrystalline silicon residues in the polycrystalline silicon etching process, and relates to the field of micro-electronics. The method includes the steps that an optical line width measuring instrument is used for measuring the thickness H1 of an original bottom anti-reflection layer in a polycrystalline silicon gate, and first-time etching time is set; first-time etching is conducted on the polycrystalline silicon gate according to the set first-time etching time, and the first-time etching thickness H2 is acquired; in accordance with the thickness H1 of the original bottom anti-reflection layer and the first-time etching thickness H2, a manufacturing procedure control system is used for monitoring, and second-time etching is conducted on the polycrystalline silicon gate. According to the method for removing the polycrystalline silicon residues in the polycrystalline silicon etching process, before the polycrystalline silicon gate is etched, the optical line width measuring instrument is used for measuring the thickness of the anti-reflection layer at the bottom of the polycrystalline silicon, the manufacturing procedure control system feeds back and corrects the etching time from time to time through the corresponding etching process parameter according to the thickness of the bottom anti-reflection layer so that the polycrystalline silicon gate of the polycrystalline silicon can be etched, the purpose of removing the polycrystalline silicon residues in the polycrystalline silicon etching process is achieved, and the yield of products is improved.
Description
technical field [0001] The invention relates to the field of microelectronics, in particular to a method for eliminating polysilicon residues. Background technique [0002] In the process technology of 65 nanometers and below, there will be a certain height difference between the working area and the shallow trench isolation area. Due to the influence of the height difference, under the same lithography conditions, such as figure 1 As shown, the thickness of the photolithographic bottom anti-reflection layer of the polysilicon gate a above the substrate c will vary. Under the same etching and cleaning conditions, polysilicon gate etching of a silicon wafer with a thicker bottom anti-reflection layer will have a certain amount of polysilicon residue b, which will affect the overall performance. [0003] In order to eliminate polysilicon residues, the technical means currently used are: during the process of etching the bottom anti-reflective layer of polysilicon, observe the...
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IPC IPC(8): H01L21/28H01L21/66
CPCH01L21/28H01L21/306H01L22/12H01L22/30
Inventor 束伟夫荆泉任昱张旭升
Owner SHANGHAI HUALI MICROELECTRONICS CORP