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Electrostatic protection ring based on high-voltage process

An electrostatic protection and process technology, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of increasing the current path, breakdown, random damage and increasing the difficulty of integrated circuit design, and achieves improved antistatic level, Enhance the effect of pressure resistance

Inactive Publication Date: 2015-03-25
梁懿
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Electrostatic protection structure has always been a difficult point in the manufacture of integrated circuits. The randomness of electrostatic current and the damage to the weakest part of the circuit increase the difficulty of designing integrated circuits. The protection ring is a commonly used structure in the field of integrated circuit manufacturing. , used to lead away the electrostatic current on the pin from the ground wire or the power line. In order to increase the current path, the connection holes between the layers of the guard ring are usually as full as possible, but at the corner of the guard ring, Because of the concentration of power lines in the sharp corner area, it is easy to break down at the corner

Method used

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  • Electrostatic protection ring based on high-voltage process

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Embodiment Construction

[0013] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0014] An electrostatic protection ring based on a high-voltage process according to the present invention includes a first physical layer, a second physical layer, and a plurality of holes connecting the first physical layer and the second physical layer, and is characterized in that the electrostatic protection ring Sharp areas at corners do not have holes.

[0015] When the electrostatic current flows, it flows uniformly from the first physical layer to the second physical layer through all the connected holes. At the corner of the electrostatic protection ring, since there is no hole at the sharp corner, no current flows through the sharp corner, and the corresponding The electric field and electric field line density at the sharp corner are weakened, and the withstand voltage level at the sharp corner is improved.

[0016] Thi...

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Abstract

Disclosed is an electrostatic protection ring based on a high-voltage process. The electrostatic protection ring comprises a first physical layer, a second physical layer, and multiple holes connecting the first physical layer with the second physical layer, and is characterized in that the closed angle area at the corner of the electrostatic protection ring is not provided with the holes. By using the electrostatic protection ring based on the high-voltage process, the number of the holes at the corner is reduced, such that an electric field wire is weakened at the corner, the pressure-withstanding performance of the corner is enhanced, and the antistatic grade of a whole chip is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing and relates to an electrostatic protection ring based on a high-voltage process. Background technique [0002] Static electricity can be generated when different substances come into contact, separate or rub against each other. For example, extrusion, cutting, handling, stirring and filtering in the production process, as well as walking, standing up and undressing in life, will generate static electricity. It can be seen that static electricity can be said to be ubiquitous in our daily life, and our body and surroundings carry a high electrostatic voltage, thousands of volts or even tens of thousands of volts. These static electricity can directly cause some ESDS (electrostatic sensitive components) to lose their normal performance, or even completely lose their normal function. [0003] Electrostatic protection structure has always been a difficult point in the manufacture of integra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60
Inventor 梁懿
Owner 梁懿
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