Resistive memory and manufacture method thereof

Abstract

The invention discloses a resistive memory and a manufacture method thereof. The method comprises: first of all, sequentially forming a first electrode, a variable resistance layer and a mask layer on a substrate; then, forming a dielectric layer covering the first electrode, the variable resistance layer and the mask layer on the substrate; next, performing an etching process to form an opening in the dielectric layer and the mask layer, the opening exposing a part of the variable resistance layer; afterwards, forming a second electrode in the opening, and afterwards, forming a conductive layer on the second electrode.

Description

technical field [0001] The present invention relates to a memory and its manufacturing method, and in particular to a resistive memory and its manufacturing method. Background technique [0002] In recent years, the development of resistive memory (such as resistive random access memory (RRAM)) is extremely fast, and it is currently the most attention-grabbing future memory structure. Due to the potential advantages of low power consumption, high-speed operation, high density and compatibility with complementary metal oxide semiconductor (CMOS) process technology, resistive memory is very suitable as a next-generation non-volatile memory device . [0003] The current resistive memory usually includes an upper electrode and a lower electrode disposed opposite to each other and a variable resistance layer located between the upper electrode and the lower electrode, which has a generally well-known metal-insulator-metal (MIM) structure. Generally, after forming the above meta...

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Problems solved by technology

In this way, it will cause electrical problems of the resistive memory

In addition, if wet etching is used instead of dry etching, it is easy to fail to form the desired contact window profile due to overetching, which will easily lead to short circuit problems.

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