Charge pump circuit and storage device

Abstract

The invention discloses a charge pump circuit and a storage device. The charge pump circuit comprises a time clock driving unit, a boosting unit, a voltage dividing unit and a comparison unit. When receiving a first control level, the time clock driving unit stops working; otherwise, driving voltage is output; the boosting unit is used for boosting the driving voltage and then outputting boosted voltage; when the boosted voltage changes from the maximum voltage value to the minimum voltage value, a capacitance voltage dividing sub-unit divides the boosted voltage and outputs divided voltage; otherwise, a non-capacitance voltage dividing sub-unit divides the boosted voltage and outputs divided voltage; delay exits on the path from the comparison unit to the input end of the boosting unit, after the boosted voltage reaches target voltage from initial voltage, the boosted voltage and the divided voltage change in a periodic oscillation mode, and when the divided voltage changes from the maximum value to the minimum value, the comparison unit outputs the first control level; otherwise, a second control level is output. The power of the charge pump circuit can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a charge pump circuit and memory. Background technique [0002] In recent years, during the rapid development of semiconductor memory, advanced memory such as DRAM, EFPROM, and FLASH has the advantages of high density, low power consumption, and low price, and it has become a storage device commonly used in computers and mobile communication terminals. In semiconductor memory, the charge pump circuit is a circuit module that provides high voltage, and the storage system uses the high-amplitude programming voltage drop output by the charge pump circuit to write data information into the memory module. [0003] figure 1 A schematic structural diagram of a charge pump circuit in the prior art is shown. The charge pump circuit includes: a clock drive unit 11, a boost unit 12, a voltage divider unit 13 and a comparison unit 14, wherein: in the start-up of the charge pum...

AI Technical Summary

Problems solved by technology

[0010] However, the above method of reducing power is still difficult to meet the power requirements of the charge pump circuit in the standby state of the memory.

Images