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Laser etching method of transparent conductive thin film

A technology of transparent conductive film and laser etching method, which is applied in the direction of laser welding equipment, welding equipment, metal processing equipment, etc., can solve the problems of complex implementation and high requirements for laser focusing accuracy, and achieve the requirements of reducing laser focusing accuracy and reliability Good, reasonably priced results

Active Publication Date: 2015-04-01
杭州银湖激光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The purpose of the present invention is to provide a laser etching method for transparent conductive films, which overcomes the problems of high laser focus accuracy and complex implementation in the prior art

Method used

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  • Laser etching method of transparent conductive thin film
  • Laser etching method of transparent conductive thin film
  • Laser etching method of transparent conductive thin film

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Embodiment 1

[0029] Embodiment one: see figure 1 Shown, a kind of laser etching method of transparent conductive film, comprises the steps:

[0030] (1) A short-wavelength infrared pulse laser is used to output a pulse laser with a wavelength between 1.4 μm and 3.0 μm, and the pulse width is 0.1 ns to 800 ns, and it is collimated. The short-wavelength infrared pulse laser is a fiber laser with a single pulse The laser energy is 1-2000 microjoules, and the pulse frequency is 1 kHz to 1 MHz;

[0031](2) irradiating the pulsed laser beam onto the film substrate placed on the two-dimensional translation stage, controlling the relative movement of the laser beam and the two-dimensional translation stage, so that the focal point of the laser beam moves on the transparent conductive film according to a set path, Etching is carried out, and the relative movement speed of the laser and the transparent conductive film is controlled to be 50mm / s-9000mm / s, and the overlapping degree of the light spo...

Embodiment 2

[0033] Embodiment two: see figure 2 Shown, a kind of laser etching method of transparent conductive film, comprises the steps:

[0034] (1) A short-wavelength infrared pulse laser is used to output a pulse laser with a wavelength between 1.4 μm and 3.0 μm, and the pulse width is 0.1 ns to 800 ns, and it is collimated. The short-wavelength infrared pulse laser is a fiber laser with a single pulse The laser energy is 1-2000 microjoules, and the pulse frequency is 1 kHz to 1 MHz;

[0035] (2) irradiating the pulsed laser beam onto the film substrate placed on the two-dimensional translation stage, controlling the relative movement of the laser beam and the two-dimensional translation stage, so that the focal point of the laser beam moves on the transparent conductive film according to a set path, Etching is carried out, and the relative movement speed of the laser and the transparent conductive film is controlled to be 50mm / s-9000mm / s, and the overlapping degree of the light s...

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Abstract

The invention discloses a laser etching method of a transparent conductive thin film. The method comprises the following steps of (1) outputting pulse laser beams with an output wavelength of 1.4-3.0 mu m through a short-wave long-infrared pulse laser device at a pulse width of 0.1-800 ns, and performing collimation treatment, wherein the short-wave long-infrared pulse laser device is an optical fiber laser device and has a single-pulse laser power capacity of 1-2000 microjoules and a pulse frequency of 1 KHz-1 MHz; (2) enabling the laser beams to illuminate a film substrate on a two-dimensional moving table, controlling the relative movement of the laser beams and the two-dimensional moving table to enable the focus point of the laser beams to move on the transparent conductive thin film according to a set path to perform etching, and controlling the laser beams and the transparent conductive thin film to move relatively as a speed of 50-9000 mm / s and to have a spot overlapping degree of 10-90%. The laser etching method of the transparent conductive thin film can overcome the problems of high laser focusing precision requirements and implementing complexity in the prior art.

Description

technical field [0001] The invention relates to a laser processing preparation method for a transparent conductive film, in particular to a method for laser etching a film layer of the transparent conductive film. Background technique [0002] Transparent conductive film is a kind of film that can conduct electricity and has high transparency in the visible light range, mainly including metal film system, oxide film system, other compound film system, polymer film system, composite film system, etc. The metal film system has good electrical conductivity, but poor transparency. The semiconductor film series is just the opposite, with poor conductivity and high transparency. At present, the most widely studied and applied are the metal film system and the oxide film system. Common transparent conductive films are ITO (tin-doped indium trioxide), AZO (aluminum-doped zinc oxide), etc., which have a large band gap and do not absorb visible light, so they are called "transparent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/362
Inventor 蒋仕彬
Owner 杭州银湖激光科技有限公司
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