28 results about "Pulsed laser device" patented technology

The utility model discloses a pulse laser device in industrial CR, comprising a conveyer belt, the top of the conveyer belt is provided with a support frame used for detection, the support frame is internally provided with an adjusting mechanism used for movement, and the adjusting mechanism is internally provided with a detection mechanism; by means of the arrangement of the detection mechanism, when the laser detector detects an electronic component, an air pump can work to inflate the interior of the first shell, and when gas enters the interior of the first shell, the gas is injected into the interior of the second shell by means of communication of a rotary connecting piece and the second shell, so that the detection efficiency is improved. The laser detector is arranged in the dustproof part, air is blown to the detection lens of the laser detector through the first spray head, the second servo motor works to drive the gear to rotate while the first spray head blows air, the second shell is driven to rotate through meshing connection of the gear and the gear ring, and the dustproof effect of the dustproof part is further improved.

The invention discloses an integrated multi-beam device and method for aircraft part laser preheating, polishing and strengthening, and the device comprises a computer control system, a laser preheating device, a picosecond pulse laser device, an ultra-strong pulse laser device and a workbench, wherein the computer control system is used for controlling the movement of the laser preheating device, the ultra-strong pulse laser device, the picosecond pulse device and the workbench; the laser preheating device is used for focusing large-light-spot continuous laser beams on the surface of the aircraft part loaded on the surface of the workbench, and preheating of the surface of the aircraft part is achieved. The picosecond pulse device is used for forming small light spots which are focused on the preheated surface of the aircraft part to polish the surface of the aircraft part; the ultra-strong pulse laser device is used for forming high-energy small light spots which are focused on the polished surface of the aircraft part, and laser shock peening of the surface of the aircraft part is achieved. The machining efficiency and precision of aircraft parts can be effectively improved, and the manufacturing cost is reduced.

A method for evaluating radiation resistance of an analog semiconductor device under test is provided. The method for evaluating radiation resistance of the analog semiconductor device under test comprises the steps of: providing the analog semiconductor device under test to a heavy ion device to obtain a first graph representing a first cross-sectional value of the analog semiconductor device under test according to a linear energy transfer (LET) value of a base section; providing the analog semiconductor device under test to a pulse laser device to derive a second cross-sectional value of the semiconductor device under test according to a laser energy value, deriving an equivalent linear energy transfer value using the second cross-sectional value, and obtaining a second graph representing the second cross-sectional value according to the equivalent linear energy transfer value; and obtaining an integrated graph by combining the first graph and the second graph, and deriving the first cross-sectional value of the remaining section excluding the base section from the integrated graph, wherein the base section may be a range of the linear energy transfer value that the heavy ion device can provide due to the characteristics of the heavy ion device.

A pulsed laser device including: a III-V-on-silicon type hybrid pulsed laser source, including a gain section and a saturable absorber section which rest on a photonic substrate, and a longitudinal waveguide located in the photonic substrate; a control optical device including an optical pulse emitter source and a lateral waveguide located in the photonic substrate; the waveguides being sized so that the confinement factor Γlae / SA, Γlai / G in the quantum wells of the corresponding section of the optical mode of the lateral waveguide is higher than the confinement factor IL / ms, in the quantum wells of the semiconductor medium, of the optical mode of the longitudinal waveguide.

The application discloses a kind of fixed frequency and variable frequency multi-pulse laser emitting device, including three polaroids, four dichroic mirrors, reflecting mirror and four groups of cavities, each group of cavities includes back mirror, electro-optic Q switch and crystal.The first cavity emits first time pulse laser, interval time dt1 after second cavity emits second time pulse laser, then after interval time dt2, third cavity emits third time pulse laser, and after interval time dt3, fourth cavity emits fourth time pulse laser, repeat this process to form multi-pulse laser, wherein interval time dt1 is equal to interval time dt3, interval time dt2 can be continuously adjustable, to form fixed frequency and variable frequency multi-pulse laser.The device of the application can realize multiple trigger laser distribution results with adjustable time interval in a single sampling period, and further realizes the measurement of high time resolution of flow field, improves test efficiency.

An EUV light generation apparatus includes a chamber; a target supply device configured to supply a target into the chamber; a first pulse laser device configured to irradiate the target with first pulse laser light in a plasma generation region in the chamber; an EUV light concentrating mirror arranged in the chamber and configured to reflect EUV light, radiated from the plasma generation region, toward an external apparatus; and a second pulse laser device configured to irradiate a diffusion matter, diffused by the irradiation with the first pulse laser light, with second pulse laser light having an irradiation spot diameter larger than an irradiation spot diameter of the first pulse laser light. An intensity of the EUV light generated by the irradiation with the second pulse laser light is smaller than an intensity of the EUV light generated by the irradiation with the first pulse laser light.

The application provides a laser etching device and method, relates to the technical field of laser processing, and the device comprises a pulse laser device and a base for carrying a battery. The pulse laser device is used for emitting a plurality of laser sub-beams towards the battery. The surface of the battery has at least one electrode line preset area. After the plurality of laser sub-beams are emitted, a plurality of focused light spots are formed in the same electrode line preset area. The plurality of focused light spots are spaced apart from each other. The pulse laser device is used for controlling the plurality of focused light spots to scan the battery along the same electrode line preset area. The arrangement direction of at least two focused light spots in the plurality of focused light spots is arranged at an acute angle with the scanning direction of the plurality of focused light spots. When the plurality of focused light spots satisfying the above conditions are used to perform laser etching on the same electrode line preset area, the spacing between adjacent etching holes is increased, the etching width is optimized, the seed crystal area is increased, the series resistance is reduced, the fill factor is improved, and the photoelectric conversion efficiency is improved.

A fiber structure includes first and second optical fibers disposed such that tip portions thereof butt and a sheet-shaped saturable absorber sandwiched between the tip portion of the first optical fiber and the tip portion of the second optical fiber. Each of the tip portions of the first optical fiber and the second optical fiber has a core, a cladding provided around the core, and a ferrule provided around the cladding. The tip portion of the first optical fiber has a protruding shape protruding to a tip side. The saturable absorber has an adhering part at least adhering to the core of the first optical fiber and a non-adhering part present around the adhering part and not adhering to the tip portion of the first optical fiber.

The application relates to the technical field of laser pulse, in particular to a composite pulse laser device which comprises an output mirror, a polarizer, a laser gain module, a first reflector, a first Q switch, a second reflector, a second Q switch and a controller, the first reflector, the first Q switch, the polarizer and the output mirror form a first pulse laser resonant arm cavity, the second reflector, the second Q switch, the polarizer and the output mirror form a second pulse laser resonant arm cavity, the polarizer transmits first direction polarized laser and reflects second direction polarized laser, tens of nanoseconds and hundreds of nanoseconds laser are output from the laser gain module and the output mirror, the output of pulse laser of the first pulse laser resonant arm cavity and the second pulse laser resonant arm cavity is controlled by the controller, the pulse interval is flexibly adjustable, the application has compact structure and flexible design, tens of nanoseconds and hundreds of nanoseconds laser output can be simultaneously realized under the control of the same electric signal, and the application has strong practicability.

This invention discloses a pulsed laser device. The pulsed laser device includes a seed source, a pre-amplification unit, a main amplification unit, an acousto-optic modulation unit, and a frequency conversion unit. The seed source outputs a seed pulse beam to be amplified; the pre-amplification unit amplifies the pulse into a first-stage amplified beam; the main amplification unit further amplifies the pulse; the acousto-optic modulation unit controls the repetition frequency of the pulse; and the frequency conversion unit converts the frequency of the output pulse using frequency doubling or sum-frequency effects. The technical solution of this invention employs a step-by-step amplification method of pre-amplification and main amplification to amplify the seed pulse beam. Furthermore, the main amplification unit flexibly shapes the incident beam, coordinating with the shaping of the pump light to achieve optimal matching between the two, thereby improving energy extraction efficiency and beam quality, and achieving the dual effects of high power and high beam quality.

This invention discloses a grounding system for suppressing transient electromagnetic interference from laser target firing, belonging to the field of electromagnetic compatibility grounding technology. It aims to solve the problem of efficient discharge of broadband, high-intensity electromagnetic pulses generated by high-pulse laser target firing. The system includes an inner equipotential ring, an outer annular grounding surface, symmetrical connection components, and an external grounding network. The inner equipotential ring is located inside the target cavity and is electrically connected to the cavity wall through multiple overlapping points to equalize the transient potential within the cavity. The outer annular grounding surface surrounds the target cavity and is electrically connected to the inner equipotential ring through at least four symmetrically distributed conductive connectors. The outer annular grounding surface is connected to multiple points of vertically arranged grounding electrodes in a ring array via multiple connecting flat steel bars to achieve electromagnetic pulse current discharge. This invention can effectively suppress ground potential rise and secondary electromagnetic interference, improving the operational stability and measurement accuracy of high-pulse laser devices.

The invention relates to the technical field of all-solid-state laser, and provides a 1-micron wave band direct pump optical parameter intermediate infrared laser device and a regulation and control method thereof, the device comprises a fundamental frequency light source, a shaping lens module, a pulse modulation module and a synchronous pump resonant cavity, and a gain medium with matched phases is arranged in the cavity. The pumping laser is injected into the gain medium to generate intermediate infrared laser which is output through the output mirror. The intermediate infrared pulse laser device is provided with a resonant cavity with a simple structure and can stably output intermediate infrared laser with high conversion efficiency and high output power under the condition of high repetition frequency, and the problem that when an existing intermediate infrared pulse laser device generates high-power intermediate infrared laser in the high repetition frequency pumping process, a crystal is prone to generating a serious heat effect, and thermally-induced stress damage is caused is solved.

The invention discloses a laser processing system and a laser processing method, which are used for carrying out surface treatment on a wafer. The laser processing system comprises a pulse laser device, a space optical modulator, a scanning mirror group, an optical sensing element and an arithmetic device. The space optical modulator is arranged on the output path of the pulse laser device and used for generating a diffraction pattern to modulate a light spot shape formed by the laser beam on the surface of the wafer. The scanning mirror set is used for being controlled to guide the light spot shape of the laser beam at a scanning angle to conduct machining along the machining track in the machining area of the surface of the wafer. The optical sensing element is used for obtaining a feedback light signal from the processing area to generate an image. And the arithmetic device is used for controlling the space optical modulator to generate the diffraction pattern according to the chromaticity data of the image and controlling the scanning mirror group to scan at the scanning angle.

A method for evaluating radiation resistance of a semiconductor device under test according to the present invention may comprise the steps of: providing a semiconductor device under test to a heavy ion device to measure a cross-section (σ) value of the semiconductor device under test according to a linear energy transfer (LET) value in a base interval; providing the semiconductor device under test to a pulsed laser device and measuring the cross-section value of the semiconductor device under test according to a laser energy value; and converting the laser energy value provided to the pulsed laser device into a corresponding linear energy transfer value to estimate the cross-section value of the semiconductor device under test according to the linear energy transfer value in intervals other than the base interval.

A part (27) 3D printed by a pulsed laser device (200). The part has a predetermined feature that includes a plurality of 3D prints (29) and voids in a mesh pattern. The mesh pattern has a plurality of locations disposed along a series of substantially parallel rows, and each location includes a 3D print or a void. A pulse from the pulsed laser device forms the 3D prints, and an absence of the pulse forms the voids. The pulsed laser device is controlled by a computing device that sends a packet of instructions to the pulsed laser device, the packet of instructions comprising at least two instructions, each single instruction notifying the laser (20) to pulse or not pulse, thereby creating a 3D print or void at each location on the mesh pattern, respectively.

An EUV light generation system includes a prepulse laser device outputting prepulse laser light to be radiated to a target supplied into a chamber; a main pulse laser device outputting main pulse laser light to be radiated to a diffusion target generated by the radiation of the prepulse laser light; a first actuator adjusting an irradiation position of the prepulse laser light; a second actuator adjusting an irradiation position of the main pulse laser light; an EUV sensor detecting EUV energy; a laser energy sensor detecting laser energy of the main pulse laser light; a target sensor imaging the diffusion target; and a controller controlling, after controlling the first actuator based on a characteristic value of the diffusion target calculated from an image of the diffusion target, the second actuator so that a ratio of the EUV energy to the laser energy detected by the laser energy sensor becomes large.

A pulse laser power source includes a step-up transformer in which a pulse current flows to a primary side, a first magnetic pulse compression circuit transferring charge of the first transfer capacitor to a second transfer capacitor, a second magnetic pulse compression circuit transferring charge of the second transfer capacitor to a peaking capacitor, a reset circuit including reset windings performing magnetic reset, and a series circuit of a resistor and an inductor connected in parallel to the peaking capacitor. A resistance value of the resistor is in a range of 100 to 1000Ω inclusive. An inductance L of the inductor satisfies ((ωL)2+R2)1 / 2>1 / ωCp and L≤(1 / Rep−Tm)×R / 2, where a capacitance of the peaking capacitor is Cp, a resonance angular frequency during transfer of charge from the second transfer capacitor to the peaking capacitor is ω, a repetition frequency is Rep, and a required time for the magnetic reset is Tm.

The present disclosure provides a power supply for a pulsed laser, a pulsed laser device, and a method for manufacturing an electronic device. The power supply for a pulsed laser has a step-up transformer, a first magnetic pulse compression circuit that transfers charge of a first transfer capacitor connected to a secondary side of the step-up transformer to a second transfer capacitor, a second magnetic pulse compression circuit that transfers charge of the second transfer capacitor to a peaking capacitor, a reset circuit, and a series circuit of a resistor and an inductor connected in parallel to the peaking capacitor, a resistance value R of the resistor being 100 Ω or more and 1000 Ω or less, an inductance L of the inductor satisfying the following two equations when a capacitance of the peaking capacitor is Cp, a resonance angular frequency when transferring charge from the second transfer capacitor to the peaking capacitor is ω, a repetition frequency is Rep, and a required time for magnetic reset is Tm.

The invention discloses an all-fiber pulse laser device based on optical fiber saturable absorption amplification and a generation method. The pulse laser device is composed of a pumping module, an optical fiber circulator, a doped saturable absorption optical fiber amplifier and a main oscillator. The method comprises the steps that the pumping module outputs pumping light to the optical fiber circulator; the optical fiber circulator transmits the pump light to the doped saturable absorption optical fiber amplifier, and meanwhile, the main oscillator generates a seed pulse signal and inputs the seed pulse signal to the doped saturable absorption optical fiber amplifier; pump light is absorbed through the saturable absorption effect of the doped saturable absorption optical fiber amplifier, ground state ions absorb the pump light and suppress oscillation of a main oscillator under low pumping power, the ground state bleaching effect triggers release in a pulse along with enhancement of the pumping power, meanwhile, pulse energy is amplified through stimulated radiation, and therefore the pulse energy is amplified. And high-peak power pulse laser output is obtained. The device and the method can realize high peak power, high average power and stable pulse laser output.

The pulse energy of pulsed laser light is stabilized. [Solution] The power supply for the pulse laser comprises a step-up transformer, a first magnetic pulse compression circuit that transfers the charge of a first transfer capacitor connected to the secondary side of the step-up transformer to a second transfer capacitor, a second magnetic pulse compression circuit that transfers the charge of the second transfer capacitor to a peaking capacitor, a reset circuit, and a series circuit of a resistor and an inductor connected in parallel to the peaking capacitor. The resistance value R of the resistor is 100Ω or more and 1000Ω or less. When the capacitance of the peaking capacitor is Cp, the resonant angular frequency when the charge is transferred from the second transfer capacitor to the peaking capacitor is ω, the repetition frequency is Rep, and the time required for magnetic reset is Tm, the inductance L of the inductor satisfies the following two equations. ((ωL) 2 +R 2 ) 1 / 2 >1 / ωCp, L ≤ (1 / Rep - Tm) × R / 2

The invention relates to a laser blasting device and method capable of detecting optical path loss, laser generated by a pulse laser device is propagated in an optical fiber through an optical fiber connector, the laser in the optical fiber is coupled through an optical fiber coupler and passes through a beam expander and a beam splitter prism, and a transmission beam after beam splitting enters an optical path detection system; and the reflected light beam passes through the focusing lens and the optical lens and is finally focused at the upper part in the gas storage cylinder close to the optical lens part to induce the gas in the gas storage cylinder to generate high-temperature plasma. High-pressure gas is induced by laser to generate high-temperature plasma, optical path loss is detected in real time by an optical path detection system, the plasma is enhanced in an auxiliary manner by a magnetic field and is more stable, and the high-temperature plasma enables the gas to be heated and rapidly expanded so as to generate explosion. According to the laser blasting device and method capable of detecting the optical path loss, the safety risk in the blasting process is reduced, the energy utilization efficiency is improved, and the controllability of blasting operation is improved.

A laser system includes a first pulse laser apparatus configured to output a first pulse laser beam in a predetermined cycle, a second pulse laser apparatus configured to output a second pulse laser beam in the predetermined cycle, a first polygon mirror configured to reflect the first pulse laser beam and the second pulse laser beam, and a processor configured to control the first pulse laser apparatus, the second pulse laser apparatus, and the first polygon mirror such that the first pulse laser beam and the second pulse laser beam are output with a shift of ½ of the predetermined cycle between them and optical paths of the first pulse laser beam and the second pulse laser beam reflected by the first polygon mirror are oriented in a first direction and at least partially overlapped.

An EUV light generation system includes a prepulse laser device outputting prepulse laser light to be radiated to a target supplied into a chamber; a main pulse laser device outputting main pulse laser light to be radiated to a diffusion target generated by the radiation of the prepulse laser light; a first actuator adjusting an irradiation position of the prepulse laser light; a second actuator adjusting an irradiation position of the main pulse laser light; an EUV sensor detecting EUV energy; a laser energy sensor detecting laser energy of the main pulse laser light; a target sensor imaging the diffusion target; and a controller controlling, after controlling the first actuator based on a characteristic value of the diffusion target calculated from an image of the diffusion target, the second actuator so that a ratio of the EUV energy to the laser energy detected by the laser energy sensor becomes large.

The invention relates to a pulsed laser device comprising: a silicon-based hybrid III / V pulsed laser source 10, having a gain section 12 and a saturable absorption section 13, both based on a photonic substrate 20, and a longitudinal waveguide 21 located in the photonic substrate 20; an optical control device 30, 40, comprising an optical pulse emitting source 31, 41 and a lateral waveguide 32, 42 located in the photonic substrate 20; the waveguides 21, 32, 42 being dimensioned such that the confinement factor Γlae / SA, Γlai / G in the quantum wells of the corresponding section 13, 12, of the optical mode of the lateral waveguide 32, 42, is greater than the confinement factor ΓL / ms, in the quantum wells of the semiconductor medium 11, of the optical mode of the waveguide Longitudinal wave 21. Figure for the abbreviation: Fig. 1A

The present invention is applicable to the technical field of virus and bacteria killing, and provides an ultraviolet pulsed laser device for virus and bacteria killing, which includes a pulsed laser module, a power supply module and a laser cavity. The power supply module is electrically connected to the pulsed laser module, the laser cavity is connected to the pulsed laser module through a laser conduction device, and the laser cavity is connected with a laser spot control module for controlling the size of the laser spot and / or controlling the irradiation path of the laser spot. The ultraviolet pulsed laser device for virus and bacteria killing provided by the present invention can vaporize viruses, decompose the viruses into carbon, water and carbon dioxide, has good virus killing effect, does not damage or contaminate objects, has a greatly improved killing efficiency, and has the advantages of high killing efficiency, no pollution, convenient to carry, long service life, low damage to target items, no consumables, etc.

The present disclosure concerns a process for producing a three- dimensional patterned coating (20), comprising forming a multilayer coating (20) comprising a plurality of layer systems (21-24) successively deposited on the substrate (10), each layer system (21-24) having an ablation threshold (Th); and performing at least a patterning step using laser irradiation generated by a pulsed laser device (50) to etch at least a cavity (30) in the coating (30). Said at least a patterning step comprises adjusting laser parameters of the pulsed laser device (50) as a function of the ablation threshold of a selected layer system (21-24) corresponding to one of the layer systems (21-24), such that said at least a cavity (30) is etched with a cavity depth (D) extending between an upper surface (201) of the uppermost layer system to the upper surface (210) of the layer system (21-24) underneath the selected layer system.

A laser system and a method of manufacturing an electronic device are provided. A laser system is provided with: a first pulse laser device that emits first pulse laser light at a predetermined period; a second pulse laser device that emits a second pulse laser at a predetermined period; a first polygon mirror that reflects the first pulse laser light and the second pulse laser light; and a processor that controls the first pulse laser device, the second pulse laser device, and the first polygon mirror such that the first pulse laser beam and the second pulse laser beam are emitted while being shifted by half of a prescribed period. The optical paths of the first pulse laser beam and the second pulse laser beam reflected by the first polygon mirror face the first direction and at least partially coincide with each other.

A sheet of material marked by a pulsed laser device. The sheet of material has a predetermined feature (17) comprising a plurality of indicia (12) and voids (11) in a mesh pattern (16). The mesh pattern (16) has a plurality of locations arranged along a series of substantially parallel rows, and each location includes a mark (12) or a void (11). A pulse from the pulsed laser device forms the marks (12), and the absence of the pulse forms the voids (11). The pulsed laser device is controlled by a computing device that sends a packet of instructions to the pulsed laser device, the packet of instructions comprising at least two instructions wherein each single instruction notifies the laser to pulse or not pulse, thereby creating a mark (12) or void (11) at each location on the mesh pattern (16), respectively.