13 results about "Pulsed laser device" patented technology

The utility model discloses a pulse laser device in industrial CR, comprising a conveyer belt, the top of the conveyer belt is provided with a support frame used for detection, the support frame is internally provided with an adjusting mechanism used for movement, and the adjusting mechanism is internally provided with a detection mechanism; by means of the arrangement of the detection mechanism, when the laser detector detects an electronic component, an air pump can work to inflate the interior of the first shell, and when gas enters the interior of the first shell, the gas is injected into the interior of the second shell by means of communication of a rotary connecting piece and the second shell, so that the detection efficiency is improved. The laser detector is arranged in the dustproof part, air is blown to the detection lens of the laser detector through the first spray head, the second servo motor works to drive the gear to rotate while the first spray head blows air, the second shell is driven to rotate through meshing connection of the gear and the gear ring, and the dustproof effect of the dustproof part is further improved.

A pulsed laser device including: a III-V-on-silicon type hybrid pulsed laser source, including a gain section and a saturable absorber section which rest on a photonic substrate, and a longitudinal waveguide located in the photonic substrate; a control optical device including an optical pulse emitter source and a lateral waveguide located in the photonic substrate; the waveguides being sized so that the confinement factor Γlae / SA, Γlai / G in the quantum wells of the corresponding section of the optical mode of the lateral waveguide is higher than the confinement factor IL / ms, in the quantum wells of the semiconductor medium, of the optical mode of the longitudinal waveguide.

An EUV light generation apparatus includes a chamber; a target supply device configured to supply a target into the chamber; a first pulse laser device configured to irradiate the target with first pulse laser light in a plasma generation region in the chamber; an EUV light concentrating mirror arranged in the chamber and configured to reflect EUV light, radiated from the plasma generation region, toward an external apparatus; and a second pulse laser device configured to irradiate a diffusion matter, diffused by the irradiation with the first pulse laser light, with second pulse laser light having an irradiation spot diameter larger than an irradiation spot diameter of the first pulse laser light. An intensity of the EUV light generated by the irradiation with the second pulse laser light is smaller than an intensity of the EUV light generated by the irradiation with the first pulse laser light.

The application provides a laser etching device and method, relates to the technical field of laser processing, and the device comprises a pulse laser device and a base for carrying a battery. The pulse laser device is used for emitting a plurality of laser sub-beams towards the battery. The surface of the battery has at least one electrode line preset area. After the plurality of laser sub-beams are emitted, a plurality of focused light spots are formed in the same electrode line preset area. The plurality of focused light spots are spaced apart from each other. The pulse laser device is used for controlling the plurality of focused light spots to scan the battery along the same electrode line preset area. The arrangement direction of at least two focused light spots in the plurality of focused light spots is arranged at an acute angle with the scanning direction of the plurality of focused light spots. When the plurality of focused light spots satisfying the above conditions are used to perform laser etching on the same electrode line preset area, the spacing between adjacent etching holes is increased, the etching width is optimized, the seed crystal area is increased, the series resistance is reduced, the fill factor is improved, and the photoelectric conversion efficiency is improved.

This invention discloses a grounding system for suppressing transient electromagnetic interference from laser target firing, belonging to the field of electromagnetic compatibility grounding technology. It aims to solve the problem of efficient discharge of broadband, high-intensity electromagnetic pulses generated by high-pulse laser target firing. The system includes an inner equipotential ring, an outer annular grounding surface, symmetrical connection components, and an external grounding network. The inner equipotential ring is located inside the target cavity and is electrically connected to the cavity wall through multiple overlapping points to equalize the transient potential within the cavity. The outer annular grounding surface surrounds the target cavity and is electrically connected to the inner equipotential ring through at least four symmetrically distributed conductive connectors. The outer annular grounding surface is connected to multiple points of vertically arranged grounding electrodes in a ring array via multiple connecting flat steel bars to achieve electromagnetic pulse current discharge. This invention can effectively suppress ground potential rise and secondary electromagnetic interference, improving the operational stability and measurement accuracy of high-pulse laser devices.

The invention discloses a laser processing system and a laser processing method, which are used for carrying out surface treatment on a wafer. The laser processing system comprises a pulse laser device, a space optical modulator, a scanning mirror group, an optical sensing element and an arithmetic device. The space optical modulator is arranged on the output path of the pulse laser device and used for generating a diffraction pattern to modulate a light spot shape formed by the laser beam on the surface of the wafer. The scanning mirror set is used for being controlled to guide the light spot shape of the laser beam at a scanning angle to conduct machining along the machining track in the machining area of the surface of the wafer. The optical sensing element is used for obtaining a feedback light signal from the processing area to generate an image. And the arithmetic device is used for controlling the space optical modulator to generate the diffraction pattern according to the chromaticity data of the image and controlling the scanning mirror group to scan at the scanning angle.

A method for evaluating radiation resistance of a semiconductor device under test according to the present invention may comprise the steps of: providing a semiconductor device under test to a heavy ion device to measure a cross-section (σ) value of the semiconductor device under test according to a linear energy transfer (LET) value in a base interval; providing the semiconductor device under test to a pulsed laser device and measuring the cross-section value of the semiconductor device under test according to a laser energy value; and converting the laser energy value provided to the pulsed laser device into a corresponding linear energy transfer value to estimate the cross-section value of the semiconductor device under test according to the linear energy transfer value in intervals other than the base interval.

A pulse laser power source includes a step-up transformer in which a pulse current flows to a primary side, a first magnetic pulse compression circuit transferring charge of the first transfer capacitor to a second transfer capacitor, a second magnetic pulse compression circuit transferring charge of the second transfer capacitor to a peaking capacitor, a reset circuit including reset windings performing magnetic reset, and a series circuit of a resistor and an inductor connected in parallel to the peaking capacitor. A resistance value of the resistor is in a range of 100 to 1000Ω inclusive. An inductance L of the inductor satisfies ((ωL)2+R2)1 / 2>1 / ωCp and L≤(1 / Rep−Tm)×R / 2, where a capacitance of the peaking capacitor is Cp, a resonance angular frequency during transfer of charge from the second transfer capacitor to the peaking capacitor is ω, a repetition frequency is Rep, and a required time for the magnetic reset is Tm.

The present disclosure provides a power supply for a pulsed laser, a pulsed laser device, and a method for manufacturing an electronic device. The power supply for a pulsed laser has a step-up transformer, a first magnetic pulse compression circuit that transfers charge of a first transfer capacitor connected to a secondary side of the step-up transformer to a second transfer capacitor, a second magnetic pulse compression circuit that transfers charge of the second transfer capacitor to a peaking capacitor, a reset circuit, and a series circuit of a resistor and an inductor connected in parallel to the peaking capacitor, a resistance value R of the resistor being 100 Ω or more and 1000 Ω or less, an inductance L of the inductor satisfying the following two equations when a capacitance of the peaking capacitor is Cp, a resonance angular frequency when transferring charge from the second transfer capacitor to the peaking capacitor is ω, a repetition frequency is Rep, and a required time for magnetic reset is Tm.

The pulse energy of pulsed laser light is stabilized. [Solution] The power supply for the pulse laser comprises a step-up transformer, a first magnetic pulse compression circuit that transfers the charge of a first transfer capacitor connected to the secondary side of the step-up transformer to a second transfer capacitor, a second magnetic pulse compression circuit that transfers the charge of the second transfer capacitor to a peaking capacitor, a reset circuit, and a series circuit of a resistor and an inductor connected in parallel to the peaking capacitor. The resistance value R of the resistor is 100Ω or more and 1000Ω or less. When the capacitance of the peaking capacitor is Cp, the resonant angular frequency when the charge is transferred from the second transfer capacitor to the peaking capacitor is ω, the repetition frequency is Rep, and the time required for magnetic reset is Tm, the inductance L of the inductor satisfies the following two equations. ((ωL) 2 +R 2 ) 1 / 2 >1 / ωCp, L ≤ (1 / Rep - Tm) × R / 2

The invention relates to a laser blasting device and method capable of detecting optical path loss, laser generated by a pulse laser device is propagated in an optical fiber through an optical fiber connector, the laser in the optical fiber is coupled through an optical fiber coupler and passes through a beam expander and a beam splitter prism, and a transmission beam after beam splitting enters an optical path detection system; and the reflected light beam passes through the focusing lens and the optical lens and is finally focused at the upper part in the gas storage cylinder close to the optical lens part to induce the gas in the gas storage cylinder to generate high-temperature plasma. High-pressure gas is induced by laser to generate high-temperature plasma, optical path loss is detected in real time by an optical path detection system, the plasma is enhanced in an auxiliary manner by a magnetic field and is more stable, and the high-temperature plasma enables the gas to be heated and rapidly expanded so as to generate explosion. According to the laser blasting device and method capable of detecting the optical path loss, the safety risk in the blasting process is reduced, the energy utilization efficiency is improved, and the controllability of blasting operation is improved.

An EUV light generation system includes a prepulse laser device outputting prepulse laser light to be radiated to a target supplied into a chamber; a main pulse laser device outputting main pulse laser light to be radiated to a diffusion target generated by the radiation of the prepulse laser light; a first actuator adjusting an irradiation position of the prepulse laser light; a second actuator adjusting an irradiation position of the main pulse laser light; an EUV sensor detecting EUV energy; a laser energy sensor detecting laser energy of the main pulse laser light; a target sensor imaging the diffusion target; and a controller controlling, after controlling the first actuator based on a characteristic value of the diffusion target calculated from an image of the diffusion target, the second actuator so that a ratio of the EUV energy to the laser energy detected by the laser energy sensor becomes large.

The invention relates to a pulsed laser device comprising: a silicon-based hybrid III / V pulsed laser source 10, having a gain section 12 and a saturable absorption section 13, both based on a photonic substrate 20, and a longitudinal waveguide 21 located in the photonic substrate 20; an optical control device 30, 40, comprising an optical pulse emitting source 31, 41 and a lateral waveguide 32, 42 located in the photonic substrate 20; the waveguides 21, 32, 42 being dimensioned such that the confinement factor Γlae / SA, Γlai / G in the quantum wells of the corresponding section 13, 12, of the optical mode of the lateral waveguide 32, 42, is greater than the confinement factor ΓL / ms, in the quantum wells of the semiconductor medium 11, of the optical mode of the waveguide Longitudinal wave 21. Figure for the abbreviation: Fig. 1A