Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires

A technology of solar-grade silicon wafers and diamond wires, applied in stone processing equipment, fine working devices, manufacturing tools, etc., can solve problems such as restricting productivity development, reducing equipment production capacity, and hidden cracks in the center of silicon wafers, etc. Severe surface chipping, overcoming long cutting time, and increasing the cutting efficiency of steel wire

Active Publication Date: 2015-04-01
WUXI ZHONGHUAN APPLIED MATERIALS CO LTD
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the processing of solar-grade silicon wafers, there are phenomena such as microscopic damage on the surface of the silicon wafer, edge chipping or gaps on the adhesive surface. The corners of the edge chipping gap are cracked and broken, resulting in a high rate of silicon wafer fragmentation. Usually, in order to solve this problem, it is necessary to close the knife at a lower cutting speed when retracting the knife to reduce the generation of edge chipping gaps, so that The cutting speed is reduced, the cutting time is increased, the equipment capacity is reduced, and the development of productivity is restricted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires
  • Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires
  • Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Embodiment 1: a kind of method that uses ultra-high-density diamond wire to cut solar grade silicon chip, it comprises the steps: (1) sticky stick is fixed; (2) installs ultra-high-density diamond wire; (3) wire cutting; (4) ) cleaning detection; among them,

[0012] (1) Sticking rod fixation: the silicon single crystal is cut and ground to obtain a silicon rod, and the ground silicon rod is bonded to the material plate with resin glue for curing, and the silicon rod is bonded to the material plate After being firmly installed on the wire cutting equipment;

[0013] (2) Install ultra-high-density diamond wire: install ultra-high-density diamond wire on the multi-wire cutting machine, and one end of the ultra-high-density diamond wire is wound on a traveling wheel with a small groove;

[0014] (3) Wire cutting: cutting with the ultra-high-density diamond wire, and processing the silicon rod into a silicon wafer; the diamond particle density on the ultra-high-density dia...

Embodiment 2

[0019] Embodiment 2: a kind of method that uses ultra-high-density diamond wire to cut solar grade silicon chip, it comprises the steps: (1) sticky stick is fixed; (2) installs ultra-high-density diamond wire; (3) wire cutting; (4) ) cleaning detection; among them,

[0020] (1) Sticking rod fixation: the silicon single crystal is cut and ground to obtain a silicon rod, and the ground silicon rod is bonded to the material plate with resin glue for curing, and the silicon rod is bonded to the material plate After being firmly installed on the wire cutting equipment;

[0021] (2) Install ultra-high-density diamond wire: install ultra-high-density diamond wire on the multi-wire cutting machine, and one end of the ultra-high-density diamond wire is wound on a traveling wheel with a small groove;

[0022] (3) Wire cutting: cutting with the ultra-high-density diamond wire, and processing the silicon rod into a silicon wafer; the diamond particle density on the ultra-high-density dia...

Embodiment 3

[0027] Embodiment 3: a kind of method that uses ultra-high-density diamond wire to cut solar-grade silicon chip, it comprises the steps: (1) sticky stick is fixed; (2) installs ultra-high-density diamond wire; (3) wire cutting; (4) ) cleaning detection; among them,

[0028] (1) Sticking rod fixation: the silicon single crystal is cut and ground to obtain a silicon rod, and the ground silicon rod is bonded to the material plate with resin glue for curing, and the silicon rod is bonded to the material plate After being firmly installed on the wire cutting equipment;

[0029] (2) Install ultra-high-density diamond wire: install ultra-high-density diamond wire on the multi-wire cutting machine, and one end of the ultra-high-density diamond wire is wound on a traveling wheel with a small groove;

[0030] (3) Wire cutting: cutting with the ultra-high-density diamond wire, and processing the silicon rod into a silicon wafer; the diamond particle density on the ultra-high-density dia...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for cutting solar-grade silicon wafers through ultra-high-density diamond wires. The method comprises the following steps of (1) fixing sticking bars; (2) mounting the ultra-high-density diamond wires; (3) performing wire cutting; (4) performing cleaning and detection. The method for cutting the solar-grade silicon wafers through the ultra-high-density diamond wires has the advantages that, by cutting the silicon wafers through the ultra-high-density diamond wires, the cutting speed and the cut feeding speed can be both improved, and the problems of serious tipping of feeding surfaces as well as long cutting time can be overcome; after the cut feeding speed is increased, the steel wire cutting efficiency can be enhanced, the cutting time can be saved, and the equipment productivity can be improved; the tipping rate within a length range of 300-500 mu m can be reduced by 50%, and the median of the surface roughness Rz can be reduced below 4.2 mu m.

Description

Technical field: [0001] The invention relates to a method for cutting solar-grade silicon wafers, in particular to a method for cutting solar-grade silicon wafers using ultra-high-density diamond wires. Background technique: [0002] At present, when diamond wire cuts solar monocrystalline silicon wafers, the density of diamond particles on the diamond wire is 50-70 pieces / mm, the cutting speed is 0.6-0.8mm / min, and the cutting speed is 0.2-0.25mm / min. During the processing of solar-grade silicon wafers, there are phenomena such as microscopic damage on the surface of the silicon wafer, edge chipping or gaps on the adhesive surface. The corners of the edge chipping gap are cracked and broken, resulting in a high rate of silicon wafer fragmentation. Usually, in order to solve this problem, it is necessary to close the knife at a lower cutting speed when retracting the knife to reduce the generation of edge chipping gaps, so that The cutting speed is reduced, the cutting time...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
CPCB28D5/045
Inventor 杜雪冬王景然崔伟李帅危晨赵越王龙郭刚刚王岩徐强
Owner WUXI ZHONGHUAN APPLIED MATERIALS CO LTD