Device for growing graphene in large areas

A graphene, large-area technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of uneven gas distribution, small preparation, low production capacity, etc., to achieve uniform growth and increase output , the effect of simple structure

Active Publication Date: 2015-04-01
CHONGQING GRAPHENE TECH +1
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a device for growing graphene in a large area, which overcomes the defects of uneven gas distribution, small preparation amount and low production capacity of graphite in traditional growth devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for growing graphene in large areas
  • Device for growing graphene in large areas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] When the internal diameter of quartz tube 5 was 100mm, the thickness of quartz tube 5 tube wall was 2mm; The distance between two adjacent circles of the cavity 1 is 1 mm; the metal base 4 is made of copper foil with a width of 30 cm, and the width of the ventilation cavity 1 is 32 cm. Roll the copper foil with a width of 30cm and a length of 56cm into the ventilation cavity 1. The way of rolling can be to use a soft board with the same thickness as the ventilation cavity 1 to lay under the copper foil, wrap the copper foil into a roll, and then The copper foil is introduced into the ventilation cavity 1 . The ventilation cavity 1 wrapped with copper foil is placed in the constant temperature area of ​​the quartz tube 5, and then the graphene film is deposited by chemical vapor phase.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electron mobilityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to the technical field of graphene growth devices and particularly relates to a device for growing graphene in large areas. The device comprises a quartz tube, a vent cavity and a metal substrate, wherein the vent cavity is internally hollow and is of a spiral cylindrical structure, the shape of the metal substrate is matched with that of the vent cavity, the metal substrate is spirally crimped along the inner surface of the vent cavity, the end part of the innermost ring of the vent cavity is fixedly connected with the end part of the innermost ring of the metal substrate, an air inlet is formed in each of one side of the innermost ring and the same side of the outermost ring of the vent cavity, a plurality of air outlet holes are formed in the inner surface of the vent cavity, the quartz tube sleeves outside the vent cavity and wraps the entire vent cavity. The device has the beneficial effects that the structure is simple, the crimping growth of graphene in the large areas is facilitated, the space is saved, furthermore graphene evenly grows and the yield is increased.

Description

technical field [0001] The invention relates to the technical field of graphene growth equipment, in particular to a device for growing graphene in a large area. Background technique [0002] Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim, Konstantin Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent mechanical, thermal, optical, electrical and other properties. The electron mobility of graphene at room temperature exceeds 15000cm2 / V s, surpassing carbon nanotubes an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/44
Inventor 高翾黄德萍李占成张永娜姜浩朱鹏史浩飞
Owner CHONGQING GRAPHENE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap