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Stacked semiconductor packaging method

A stacked packaging and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of immature through-hole processing technology, inability to further reduce chip thickness, and high thickness, so as to save consumables , easy to operate, and the effect of increasing the conductive area

Active Publication Date: 2015-04-01
NANTONG FUJITSU MICROELECTRONICS
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the thickness of the package is higher
Samsung proposed the implementation of laser vias, but there is no specific implementation case. Like TVS, the processing technology of via holes in the back is immature
[0006] To sum up, the traditional stacked packaging technology cannot further reduce the thickness of the packaged chip, especially the packaging height of the topmost chip.

Method used

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Examples

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Embodiment Construction

[0042] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0043] In a first embodiment of the present invention, a semiconductor stack packaging method is provided. The method includes the following steps:

[0044] Form bumps on the chip. as attached figure 2 As shown, the bump 2 is formed on the chip 1, and the top of the bump 2 is preferably spherical or ellipsoidal. Those skilled in the art should understand that the top of the bump 2 can also be cylindrical or other shapes, figure 2 And other figures only illustrate the situation that the top of the bump is spherical.

[0045] In another situation, such as image 3 As shown, there is a metal pad 3 (UBM) between the bump 2 and the chip, preferably, the metal pad 3 is an aluminum pad. The m...

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Abstract

The invention provides a stacked semiconductor packaging method which comprises the following steps: dies are stacked, bumps of dies on the lower layers are not covered with dies on the upper layers during stacking, wherein a bump is not arranged on a die on the top layer, and a resin material is applied above the dies and completely covers the bumps on the dies; side surfaces, coated with resin, of the dies are ground or polished, and parts of the bumps are exposed; and a conducting material is arranged on polished resin material layers and the exposed bumps. Compared with the prior art, the stacked semiconductor packaging method has the benefits as follows: by means of the novel packing structure and technology, the stacked die packing height is reduced, especially the packaging height of the die on the top layer is reduced, space of follow-up products is saved, meanwhile, the packaging method has mature technology, consumed packing material is saved, and the operation is simple and convenient. Besides, the conductive area between the bumps after packaging is increased, the electrical properties are more stable and more excellent, and the service life of a packaged product is prolonged.

Description

technical field [0001] The invention relates to a semiconductor packaging method, specifically a packaging method for stacking semiconductor chips. Background technique [0002] In recent years, stacked chip packaging has gradually become the mainstream of technology development. Stacked chip packaging technology, referred to as 3D packaging, refers to the packaging technology that stacks more than two chips in the same package in the vertical direction without changing the size of the package. It originated from the flash memory (NOR / NAND ) and stacked packaging of SDRAM. Stacked chip packaging technology is the ideal system solution for wireless communication devices, portable devices and memory cards. In recent years, the technology of consumer products such as mobile phones, PDAs, computers, communications, and digital products has developed very rapidly. The rapid development of this industry requires large-capacity, multi-functional, small-size, low-cost memories, DS...

Claims

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Application Information

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IPC IPC(8): H01L21/50H01L21/56H01L21/60
CPCH01L24/14H01L24/81H01L21/50H01L21/56H01L2224/14H01L2224/81H01L2224/81191H01L2224/32145H01L2224/24145H01L2224/73267H01L2224/24991H01L2224/24998
Inventor 石磊
Owner NANTONG FUJITSU MICROELECTRONICS
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