Superlattice device structure regulated by THz (terahertz) wave

Abstract

The invention provides a superlattice device structure regulated by a THz (terahertz) wave. The superlattice device structure at least comprises a semiconductor superlattice device, a heavy doping contact layer located on a periodic structure, an upper electrode on the heavy doping contact layer, a resistor forming a closed circuit with the semiconductor superlattice device, a THz wave applied to a superlattice growth direction, and a magnetic field applied perpendicular to the superlattice growth direction, wherein the semiconductor superlattice device is provided with a substrate and the periodic structure that is formed by alternately stacking potential barriers and potential wells and located on the substrate. The THz wave is coupled into the superlattice to achieve regulation of an electron motion state. The motion state of a superlattice micro-strip electron is obtained by measuring current of a superlattice external circuit or voltage across the resistor by the action of a THz field and the magnetic field. The device structure is simple in technology, and can very conveniently modulate the electron motion state in a superlattice system.

Description

technical field [0001] The invention relates to a terahertz photoelectric device technology, in particular to a superlattice device structure regulated by a terahertz wave. Background technique [0002] Terahertz (terahertz, THz, 1THz = 10 12 Hz) waves generally refer to electromagnetic waves with a frequency of 0.1-10THz, corresponding wavelengths ranging from 3mm to 30μm, and a wide spectrum range between millimeter waves and infrared light. Due to its unique physical properties, terahertz waves have broad application prospects in high-speed communications, material detection and spectrum analysis. Terahertz science and technology has become a frontier subject that has an important impact on modern science and technology, national economy and national defense construction . [0003] The energy of terahertz photons is very low, and the energy of electromagnetic waves with a frequency of 1THz is about 4meV. The characteristic energies of semiconductor superlattices, such ...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a superlattice device structure regulated by terahertz waves, which is used to solve the problem that the electronic motion state in the superlattice device in the prior art cannot be effectively modulated. question

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