Copper ion detection method based on electrolyte solution-oxide layer-semiconductor structure
A copper ion detection and semiconductor technology, which is applied in a detection field of copper ions, can solve the problem of unsatisfactory insulation of silicon oxide, etc., and achieve the effect of fast detection speed, simple operation, and precise control of device structural parameters
Active Publication Date: 2015-04-08
PEKING UNIV
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In traditional applications, silicon dioxide has been used as a good insulator, but recently with the deepening and development of research, it has been further found that the insulation of silicon oxide is not ideal under certain conditions
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[0014] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0015] Usually, quasi-static voltage excitation is selected when the test excitation is applied on the device. The device is defined as reset from conduction to cut-off, and vice versa is defined as set from cut-off to conduction. The transition of the device between the on and off states is caused by the breaking and conducting of the conductive filament channels in the silicon dioxide layer controlled by the voltage applied across the two ends.
[0016] 1) As shown in Figure 1, ion implantation is carried out on the bottom surface A of the silicon substrate 1 of low resistivity; Adopt low-pressure chemical vapor deposition system to deposit silicon dioxide film 2 and 2 ', thickness 10-500 nanometer; Use anisotropic The ...
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Abstract
The invention relates to a novel copper ion detection method, which is realized mainly by analysis of an I-V curve of an electrolyte solution-oxide layer-semiconductor device in test. The method includes the steps of: depositing silica a silicon substrate by a conventional micro-electromechanical system technique and manufacturing an extraction electrode; packaging a liquid storage tank on the silicon oxide side of the well prepared silicon oxide-semiconductor structure by a polymer; injecting a test solution into the liquid storage tank, applying appropriate test excitation, and determining the electrode placement way and the excitation application way; and drawing the test data into a curve graph, and carrying out comparative analysis with an obtained I-V curve. Because of the effect of an external high electric field, positive ions can diffuse into a silica layer to undergo reduction reaction so as to form a metalloid conductive channel, so that the I-V curve of the copper ion-containing electrolyte solution-oxide layer-semiconductor device can have a special closed angle phenomenon. The device utilizes the new detection principle, and also has the advantages of portability, simple operation, fast speed and the like, and can be widely used in ion detection, water pollution monitoring, biochemical analysis and other fields.
Description
technical field [0001] The invention relates to a method for detecting copper ions, in particular to a method for detecting copper ions using an electrolyte-oxidized layer-semiconductor structure under electrical test conditions. Background technique [0002] Copper ions are important research objects in many scientific fields such as chemistry, life science, environmental science and medicine, especially for the identification and detection of copper ions in solution. For example, different concentrations of copper ions in biological processes tend to Showing differential positive or negative effects, when the concentration of copper ions is low, it is indispensable in the coenzymes of biocatalytic reaction enzymes, biotransport processes, biosynthesis, etc.; however, when there are concentrations in organisms When it is too high, it will produce harmful effects such as inhibition of some essential enzymes, abnormal biological redox process, and neurotoxicity. At present, ...
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IPC IPC(8): G01N27/26
Inventor 吴文刚高剑光王昊毛逸飞
Owner PEKING UNIV