Gate driver circuit
By adopting a three-stage voltage dividing mode and an alternately working pull-down hold module in the GOA drive unit, combined with low-frequency pulse signal control, the problem of short life of a single-type gate drive circuit under long-term operation is solved, and lower leakage is achieved. and higher stability.
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Embodiment 1
[0056] figure 1 It is a schematic diagram of the circuit structure of the GOA driving unit according to this embodiment. The figure shows only one stage of the multi-stage GOA drive unit, labeled N. For the convenience of description, the previous stage of the GOA drive unit is labeled N-1, and the next stage of the GOA drive unit is labeled N+1.
[0057] figure 1 The GOA driving unit shown includes a pull-up control unit 100, a pull-up unit 200, a boost unit 300, a first pull-down unit 400, a pull-down holding unit 500, and a circuit reset unit 600.
[0058] The pull-up control unit 100 includes a pull-up control transistor T1. The gate of the pull-up control transistor T1 is short-circuited with the first end, receives the gate signal G(N-1) output by the N-1th GOA unit, and outputs the pull-up control signal G(N-1).
[0059] The pull-up unit 200 includes a pull-up transistor T2. The gate of the pull-up transistor T2 is coupled to the output terminal (point Q(N) in the figure) o...
Embodiment 2
[0082] figure 2 The schematic diagram of the circuit structure of the GOA driving unit of this embodiment is shown. The circuit is in figure 1 Based on the circuit shown, the pull-down holding unit 500 is further improved. Specifically, the source of the third transistor T7 receives the first control signal CKN, and the source of the fourth transistor T12 receives the second control signal XCKN. The absolute value of the low potential of the CKN and XCKN signals is set to be greater than the absolute value of the potential of the DC power supply VSS, so that the low potential of the CKN and XCKN signals can be used to achieve a stronger low-potential pull-down capability during the inactive period.
Embodiment 3
[0084] image 3 The schematic diagram of the circuit structure of the GOA driving unit of this embodiment is shown. The circuit is in figure 1 Based on the circuit shown, the pull-down holding unit 500 is further improved. Specifically, the circuit adds transistors T5 and T9, so that T5 and T6 form the first Darlington tube, and T9 and T10 form the second Darlington tube.
[0085] The base of the first Darlington tube is shorted to the first terminal to receive the first control signal CKN, and the second terminal is coupled to the pull-down holding control signal output terminal P(N) of the first pull-down holding module. Specifically, the gate and the first end of the transistor T5 are short-circuited to receive the first control signal CKN. The gate of the transistor T6 is coupled to the second terminal of T5, the first terminal of T6 is coupled to the gate of T5, and the second terminal of T6 is coupled to the P(N) point.
[0086] The base of the second Darling tube is shorte...
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