Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and a method for forming the same, wherein the method for forming the semiconductor structure includes: providing a substrate having an interconnection region; forming a first barrier film, a conductive film, a second barrier film, and a first dielectric film on the surface of the substrate; Etching part of the first dielectric film, the second barrier film, the conductive film and the first barrier film until the surface of the substrate is exposed, so as to form the first barrier layer, the first conductive layer, the second barrier film on the surface of the interconnection region of the substrate A barrier layer and a first dielectric layer; a third barrier layer is formed on the side wall surface of the first conductive layer; a second dielectric layer is formed on the substrate surface, the third barrier layer surface and the side wall surface of the first dielectric layer, and the second The surface of the dielectric layer is flush with the surface of the first dielectric layer; part of the first dielectric layer is removed to form a second opening in the second dielectric layer and the first dielectric layer, and part of the surface of the first conductive layer is exposed at the bottom of the second opening. The performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] In the field of semiconductor manufacturing, in order to realize the electrical connection between semiconductor devices, various metal interconnect structures and formation processes have been developed, such as copper interconnect structures, and copper electroplating processes (ECP, electro -coppering plating). However, with the development of ultra-large-scale integration (ULSI), the feature size (CD) of semiconductor devices is shrinking, and the process of forming metal interconnection structures is also challenged. [0003] Taking the existing copper interconnect structure as an example, Figure 1 to Figure 4 It is a schematic cross-sectional structure diagram of the formation process of the copper interconnection structure in the prior art. [0004] Please refer to ...

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Problems solved by technology

[0009] However, the copper interconnect structure formed by the prior art has poor performance

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