Graphene-doped materials, preparation method thereof, electrode, pixel structure and display device
A technology of doping materials and graphene, which is applied in the coating process of metal materials, circuits, electrical components, etc., can solve the problems of high square resistance and low square resistance of single-layer graphene, reduce square resistance and increase transmission rate Effect
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Embodiment 1
[0029] This embodiment provides a graphene-doped material, the graphene-doped material includes one layer of graphene and one layer of doping layer; the doping layer is FeCl 3 Doping layer; FeCl 3 The thickness of the doped layer is 6 nm.
[0030] The preparation method of above-mentioned graphene doped material is as follows:
[0031] 1) placing the material to be doped in the crucible in the vapor deposition machine;
[0032] 2) placing the substrate to be doped in the evaporation chamber, and heating the crucible through a heat source designed outside to perform evaporation;
[0033] 3) Control the evaporation rate by controlling the magnitude of the heating source current until the predetermined thickness is evaporated.
[0034] The above-mentioned evaporation device can independently control the material to be evaporated, the evaporation temperature is controlled at 300-400 ° C, and the vacuum degree is greater than or equal to 10. -4 The evaporation rate is controlle...
Embodiment 2
[0037] This embodiment provides a graphene-doped material, and the graphene-doped material includes one graphene layer and one doped layer; the doped layer is MgF 2 Doping layer; MgF 2 The thickness of the doped layer is 8 nm.
[0038] The preparation method of the above-mentioned doped layer is similar to the method in Embodiment 1, and will not be repeated here.
[0039] Square resistance test and transmittance test were carried out on this graphene-doped material, and the results are shown in Table 1.
Embodiment 3
[0041] This embodiment provides a graphene-doped material, and the graphene-doped material includes a graphene layer and a doping layer; the doping layer is BaF 2 Doping layer; BaF 2 The thickness of the doped layer is 10 nm.
[0042] The preparation method of the above-mentioned doped layer is similar to the method in Embodiment 1, and will not be repeated here.
[0043] Square resistance test and transmittance test were carried out on this graphene-doped material, and the results are shown in Table 1.
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