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Production method of terahertz narrow-band microwave absorber capable of dynamically adjusting absorption peak position

A terahertz and absorption peak technology, applied in the terahertz field, can solve the problems of limiting the frequency range of terahertz detectors, unable to dynamically control the position of absorption peaks, etc., to improve the sensitivity and operating frequency range, and achieve the effect of dynamic control

Inactive Publication Date: 2015-04-29
GUILIN UNIV OF ELECTRONIC TECH
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Problems solved by technology

However, the existing terahertz narrow-band absorbers all have super-absorbing effects for certain specific frequencies or frequency bands, and cannot dynamically adjust the position of the absorption peak according to specific applications, which greatly limits the applicable range of terahertz detectors. Frequency Range

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  • Production method of terahertz narrow-band microwave absorber capable of dynamically adjusting absorption peak position
  • Production method of terahertz narrow-band microwave absorber capable of dynamically adjusting absorption peak position
  • Production method of terahertz narrow-band microwave absorber capable of dynamically adjusting absorption peak position

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Embodiment Construction

[0031] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] Taking the terahertz narrow-band absorber and its 2×2 unit array with a square absorption peak position dynamically adjustable with unit size of 120 μm×120 μm in the array as examples, the present invention will be described in detail with reference to the accompanying drawings.

[0033] as attached figure 1 As shown, firstly, a first silicon nitride insulating layer 2 with a thickness of 0.6 μm is deposited on a low-resistance silicon substrate 1 . Then, as attached figure 2 As shown, continue to deposit and etch the first layer of polysilicon with a thickness of 0.5 μm, the etching depth is equal to the thickness of the first layer of polysilicon, and form the polysilicon bottom electrode 3 . as attached image 3 As shown, silicon dioxide or phosphosilicate glass 4 with a thickness of 3 μm is deposited thereon and etched to a dep...

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Abstract

The invention discloses a production method of a terahertz narrow-band microwave absorber capable of dynamically adjusting the absorption peak position. The method mainly comprises technologies such as multilayer thin-film deposition on a silicon substrate, photoetching, dry etching, wet etching and the like. The method is characterized in that the produced microwave absorber adopts an array structure, a micro-mirror capable of rotating around a shaft under the effect of the electrostatic force is arranged in the center of each unit in the array structure, and an I-shaped metal resonator is arranged in the center of the surface of each micro-mirror and used for producing resonance absorption. The terahertz narrow-band microwave absorber produced with the production method of the terahertz narrow-band microwave absorber capable of dynamically adjusting the absorption peak position and applicable to a terahertz frequency band can dynamically and continuously adjust the absorption peak position, so that the defect that absorption peak positions of conventional terahertz microwave absorbers are not adjustable is overcome. The terahertz microwave absorber can greatly increase the frequency selectivity and has very important application values in fields of terahertz detection, terahertz filtering and frequency-selective terahertz thermal imaging.

Description

technical field [0001] The invention relates to the technical field of terahertz, in particular to a method for manufacturing a terahertz narrow-band wave absorber whose absorption peak position is dynamically adjustable. Background technique [0002] At present, an important reason that restricts the popularization and application of terahertz technology is the lack of high-sensitivity terahertz detectors. In order to improve the detection sensitivity of terahertz detectors, those skilled in the art have recently proposed to make terahertz narrow-band absorbers on the receiving surface of thermal effect terahertz detectors, so as to improve the absorption rate of terahertz detectors for incident terahertz waves. Thereby improving the detection sensitivity. However, the existing terahertz narrow-band absorbers all have super-absorbing effects for certain specific frequencies or frequency bands, and cannot dynamically adjust the position of the absorption peak according to s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 胡放荣牛军浩陈涛熊显名
Owner GUILIN UNIV OF ELECTRONIC TECH
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