Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A Hall sensor and current circuit technology, applied in the electrical field, can solve problems such as interference and MOSFET switch mismatch, and achieve the effects of improving performance, eliminating Hall imbalance, and eliminating the influence of capacitance parasitics
Active Publication Date: 2015-04-29
ZHUHAI ZHONGRUI SCI & TECH CO LTD
View PDF6 Cites 5 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0005] The purpose of the present invention is to solve the problem of MOSFET switch mismatch and parasitic capacitance in the traditional spinning current circuit, and propose a spinning current circuit applied to the Hall sensor, which can eliminate the on-resistance and parasitic capacitance of the MOSFET switch tube in the spinning current circuit Interference, which solves the non-ideal factors of MOSFET switching and the problem of stabilizing the common-mode output voltage of the spinning current circuit in practical applications
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] The invention will be further described below with reference to the accompanying drawings.
[0026] like image 3 shown and Figure 5 As shown, the rotating current circuit of the present invention is composed of 9 N-channel MOS transistors (ie: M1, M2, M3, M4, M5, M6, M7, M8, M9) and an operational amplifier A. The structure of the circuit is as follows: the drains of the MOS transistors M1 and M2 are connected to the bias power supply, the source of the MOS transistor M1 is connected to the upper port (T) of the Hall device and the source of the MOS transistor M4, and the source of the MOS transistor M2 is connected to The right port (R) of the Hall device and the source of the MOS tube M3; the drains of the MOS tubes M3 and M4 are connected to the output port (Vout) of the circuit and the drain of the MOS tube M9; the sources of the MOS tubes M5 and M6 are connected to The output end of the operational amplifier, the drain of the MOS transistor M5 is connected to t...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention discloses a current rotating circuit applied to a Hall sensor. According to the circuit, interference of a turn-on resistance and a parasitic capacitance of an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) switching tube in the current rotating circuit on the circuit can be eliminated and an output common-mode voltage of the circuit is stabilized. The circuit has a simple structure and high reliability and can be widely applied to the Hall sensor to carry out current rotation of a Hall signal so as to eliminate detuning. The current rotating circuit disclosed by the invention is mainly applied to an integrated 2D (two-dimensional) Hall sensor.
Description
technical field [0001] The invention relates to a rotating current circuit applied to a Hall sensor, belonging to the technical field of electricity. Background technique [0002] Hall sensor is a magnetic field sensor made according to the Hall effect. Hall devices have many advantages. They are firm in structure, small in size, light in weight, long in life, convenient in installation, low in power consumption, high in frequency, resistant to vibration and not afraid of Pollution or corrosion from dust, oil, water vapor and salt spray. Through it, many non-electric and non-magnetic physical quantities such as force, torque, pressure, stress, position, displacement, speed, acceleration, angle, angular velocity, number of revolutions, rotational speed, and the time when the working state changes, etc. are converted into electricity. Detect and control. [0003] However, the magnetic field sensitivity of the Hall sensor based on silicon technology is low, and the misalignme...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more