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Device structure of a fast recovery diode

A technology for recovering diodes and power devices, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as difficult process control, deterioration of FRD current characteristics, and high cost

Inactive Publication Date: 2018-10-26
NANJING LISHENG SEMICON SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage is that the cost is high, the process is not easy to control, and the current characteristics of FRD will deteriorate with the increase of temperature, because the introduced defect, that is, the composite center density, will change greatly with the increase of temperature

Method used

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  • Device structure of a fast recovery diode
  • Device structure of a fast recovery diode
  • Device structure of a fast recovery diode

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Embodiment Construction

[0075] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0076]The manufacturing process of a kind of semiconductor power FRD device of the present invention can be divided into front process and back process, and front process manufactures the surface unit of device on the front surface of FZ silicon chip, and its preparation method comprises the following steps: Use the p-type region mask to implant p-type dopants on the surface of the FZ n-type silicon wafer to form a p-type region (4), then inject n-type dopants to form an n+-type layer (6), and then implant p-type into the surface The dopant forms a p+ type layer (7), then deposits a metal layer on the surface of the device, utilizes a metal mask to carry out metal er...

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Abstract

The invention discloses a device structure for a fast recovery diode. An active region of the device is characterized in that at least a part of the surface is a p-type region, the depth is greater than 2 micron, the surface concentration is 1*1015 / cm<3> to 1*1018 / cm<3>, at least two independent floating n + type layers below 0.3 micron to 2.0 micron of the surface, the distance between the n+ type layers is more than 0.2 micro, the concentration is less than 5*1019 / cm<3>, a p+type layer is arranged above the n+type layers, the surface concentration of the p+type layer is more than 1*1018 / cm<3>, and surface metal is in direct contact; when the forward current is smaller than a rated value, the current mainly flows through an opening between the n+type layers; and when surge current exists, the current also flows through the p+ / n+type layers.

Description

technical field [0001] The present invention relates to the design of a semiconductor power device, more specifically to the design of a semiconductor power fast recovery diode (FRD for short). Background technique [0002] The commercialization of thyristors was realized by General Electric Company (GE) in 1956. Since then, the thyristor has quickly become the main core switch in the field of power electronics. Many different device structures are derived from the thyristor structure. Device performance is getting better and better, and power levels are getting higher and higher. The power of early thyristors was around a few hundred watts, and by the early 1980s, it had developed to the megawatt level. However, the structure of the thyristor itself limits its operating frequency. The operating frequency of the thyristor is generally lower than 5KHz, which greatly limits its application. In the early 1980s, a variety of high-frequency gate-controlled power devices appe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06
CPCH01L29/06H01L29/861
Inventor 苏冠创
Owner NANJING LISHENG SEMICON SCI & TECH CO LTD
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