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A kind of light-emitting diode (led) and its manufacturing method

A technology for light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing the luminous efficiency of LEDs, and achieve the effects of promoting expansion, reducing light absorption, and improving luminous efficiency.

Active Publication Date: 2017-10-03
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem in the prior art that LED luminous efficiency is reduced due to strip-shaped regions absorbing the light emitted by the epitaxial layer, an embodiment of the present invention provides a light-emitting diode LED and a manufacturing method thereof

Method used

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  • A kind of light-emitting diode (led) and its manufacturing method
  • A kind of light-emitting diode (led) and its manufacturing method
  • A kind of light-emitting diode (led) and its manufacturing method

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Embodiment 1

[0033] An embodiment of the present invention provides a light emitting diode, see figure 1 The light-emitting diode includes a magnetic substrate 1 and an epitaxial layer formed on the substrate 1. The direction of the magnetic field generated by the substrate 1 is parallel to the formation direction of each layer of the LED. The epitaxial layer includes an N-type layer 2 stacked on the substrate 1 in sequence, The light-emitting layer 3, the P-type layer 4, the epitaxial layer is provided with a groove extending from the P-type layer 4 to the N-type layer 2, the P-type layer 4 is provided with a P-type electrode 5, and the N-type layer 2 is provided with an N-type electrode. Electrode 6.

[0034] In an implementation manner of this embodiment, the substrate 1 may include a magnetic substrate and a sapphire substrate bonded by an adhesive.

[0035] Specifically, the adhesive can be made of silica gel or epoxy resin.

[0036] Specifically, the thickness of the adhesive can b...

Embodiment 2

[0050] An embodiment of the present invention provides a method for manufacturing a light-emitting diode, which is applied to manufacture a light-emitting diode provided in Embodiment 1, see Figure 5 , the manufacturing method includes:

[0051] Step 201: growing an N-type layer, a light-emitting layer, and a P-type layer sequentially on a magnetic substrate to form an epitaxial layer.

[0052] Figure 6a It is a schematic structural diagram of the LED after step 201 is executed. Wherein, 1 denotes a magnetic substrate, 2 denotes an N-type layer, 3 denotes a light-emitting layer, and 4 denotes a P-type layer.

[0053] In an implementation manner of this embodiment, the manufacturing method may further include:

[0054] The magnetic substrate and the sapphire substrate are bonded by adhesive glue to form a magnetic substrate.

[0055] Specifically, the adhesive can be made of silica gel or epoxy resin.

[0056] Specifically, the thickness of the adhesive can be 10-200 mic...

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Abstract

The invention discloses a light-emitting diode (LED) and a manufacturing method thereof, belonging to the technical field of semiconductors. The LED includes a magnetic substrate and an epitaxial layer formed on the substrate. The epitaxial layer includes an N-type layer, a light-emitting layer, and a P-type layer stacked on the substrate in sequence. The epitaxial layer There is a groove extending from the P-type layer to the N-type layer, the P-type layer is provided with a P-type electrode, and the N-type layer is provided with an N-type electrode. The present invention forms a magnetic field in the LED by arranging a magnetic substrate. When the LED is energized, according to the Hall effect, the holes in the P-type layer and the electrons in the N-type layer are subjected to Lorentz force and move towards the periphery of the epitaxial layer. One side is deflected, so that the holes in the P-type layer and the electrons in the N-type layer are evenly distributed on one side of the epitaxial layer under the action of Lorentz force, which disperses the current in the epitaxial layer. Combined with the LED chip electrode design, it improves LED luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode (LED) and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, referred to as LED) is a semiconductor light emitting device, which is widely used in indicator lights, display screens and the like. White light LED is the third generation of electric light source after incandescent lamp and fluorescent lamp. The energy consumption of white light LED is only one-eighth of incandescent lamp, one-half of fluorescent lamp, and its life span can be as long as 100,000 hours. It can be described as "once and for all". [0003] Existing LEDs include a substrate and an epitaxial layer stacked on the substrate. The epitaxial layer includes an N-type layer, a light-emitting layer, and a P-type layer stacked on the substrate in sequence. The epitaxial layer has a layer extending from the P-type layer to the N...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/00
CPCH01L33/005H01L33/36H01L33/48
Inventor 尹灵峰谢鹏韩涛王江波刘榕
Owner HC SEMITEK CORP