Circuit Design for Adjusting Linearity of RF Amplifier
A radio frequency amplifier, linearity technology, applied in the field of communication, can solve the problems of no improvement in linearity compression point, small DC offset range, etc., to achieve the effect of improving linearity and expanding compensation range
Active Publication Date: 2017-10-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0005] RF amplifier M MT +M AT The third-order transconductance (G3) of the reference figure 2 shown, from figure 2 It can be seen that the compensation transistor M AT The effective compensation for RF amplified signals has a small range of DC bias, so it only helps to improve the linearity of small signals, and has no effect on the linearity compression point of large signals
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[0031] The circuit design for adjusting the linearity of the radio frequency amplifier of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention Beneficial effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0032] The core idea of the present invention is to provide a circuit design for adjusting the linearity of the radio frequency amplifier, the first PMOS transistor, the first NMOS transistor, the second PMOS transistor and the second NMOS transistor are connected in parallel with the main amplifier transistor, and the first PMOS transistor and the The first NMOS transistor, and the s...
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The circuit design for adjusting the linearity of the radio frequency amplifier of the present invention includes: a main amplifier transistor, the gate of which is connected to the first node, the drain is connected to the second node, and the source is connected to the third node; a compensation circuit, the compensation circuit includes: the first node A PMOS transistor, its source is connected to the fourth node, its drain is connected to the second node, the first capacitor is connected in series between the gate and the first node, and the first capacitor is connected in parallel between the gate and the first capacitor. Resistor; a first NMOS transistor, its source is connected to the third node, its drain is connected to the second node, a second capacitor is connected in series between its gate and the first node, and its gate is connected to the first node A second resistor is connected in parallel between the two capacitors; wherein, the first node is connected in parallel with the radio frequency input terminal and the first bias potential, and the third node is grounded through the first inductor. In the present invention, the third-order transconductance of the saturation region and the linear region of the main amplifier transistor can be compensated, thereby improving the linearity of the large and small signals of the radio frequency amplifier.
Description
technical field [0001] The invention relates to the technical field of communication, in particular to a circuit design for adjusting the linearity of a radio frequency amplifier. Background technique [0002] RF power amplifier is a key component in wireless communication base station system, its performance will directly affect the cost, performance, volume, stability and other indicators of communication products. The efficiency and linearity of RF power amplifiers are two indicators that scholars have studied most in recent years. [0003] In the prior art, the transconductance compensation circuit diagram of the radio frequency amplifier refers to figure 1 As shown, the compensation circuit includes an amplifying transistor M MT and compensation transistor M AT , amplifying transistor M MT and compensation transistor M AT The gates are respectively passed through the capacitor C MT and C AT Connected to the RF input, the amplifying transistor M MT The gate and c...
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IPC IPC(8): H03F1/32
Inventor 戴若凡
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP