Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device
An imaging device and solid-state technology, applied in the field of solid-state imaging devices, can solve the problems of area limitation, hindering the improvement of the sensitivity of photodiodes and memory saturation signal amount photodiodes, and achieve the effect of suppressing aliasing
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 example
[0040] 1. First Embodiment (Example in which a Vertical Transistor is Connected to an End of a Photodiode)
[0041] 2. Second Embodiment (Example in which a Vertical Transistor is Connected to a Central Part of a Photodiode)
no. 3 example
[0042] 3. Third Embodiment (Example in which Photodiodes and Transistors are Connected Through Injection Plugs)
[0043] 4. Fourth Embodiment (Example in which photodiode, memory, and floating diffusion are stacked in three layers)
[0044] 5. Fifth Embodiment (Example of Manufacturing Method When Photodiodes are Firstly Provided on a Substrate)
[0045]6. Sixth Embodiment (Example of Manufacturing Method When Photodiodes Are Lastly Provided on a Substrate)
[0046] 1. The first embodiment
[0047] (Structure of a general solid-state imaging device)
[0048] figure 1 It is a cross-sectional side view of a solid-state imaging device forming a backside-illuminated CMOS (complementary metal oxide semiconductor) image sensor having a global shutter function that has been widely used in the past.
[0049] Backside-illuminated CMOS image sensors with global shutter function include from figure 1 A microlens ML, a color filter CF, a photodiode PD, a memory MEM, a floating diffus...
no. 4 example
[0090] (Fourth structural example of a solid-state imaging device to which an embodiment of the present invention is applied)
[0091] In the above description, an example in which a two-layer structure including a layer as the upper face of the substrate on which the memory MEM and the floating diffusion FD are formed and a layer as the lower face has been described. In the layers of the photodiode PD, a separation film F is interposed between the upper surface and the lower surface. However, the floating diffusion FD may be laminated on the memory MEM to form a three-layer structure of the floating diffusion FD, the memory MEM, and the photodiode PD.
[0092] Figure 6 A fourth structural example of a solid-state imaging device having a three-layer structure of a floating diffusion FD, a memory MEM, and a photodiode PD formed by laminating the floating diffusion FD on the memory MEM is shown. It should be noted that in Figure 6 Among the solid-state imaging devices, the ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com