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Organic light emission diode and preparation method thereof

An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high difficulty, low light extraction efficiency, and high production cost, so as to reduce reflection and improve luminescence Brightness and luminous efficiency, the effect of increasing the light output rate

Inactive Publication Date: 2015-06-03
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide an organic electroluminescent device, which is used to solve the problems of low light extraction efficiency, high production cost and great difficulty in OLED devices in the prior art

Method used

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  • Organic light emission diode and preparation method thereof
  • Organic light emission diode and preparation method thereof

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Embodiment 1

[0053] The structure of the organic electroluminescent device of this embodiment is: PET substrate / NdF 3 / Ag / MoO 3 / NPB / Ir(MDQ) 2 (acac): NPB (10:100) / Bphen / Al.

[0054] The preparation method of the organic electroluminescent device 100 of this embodiment comprises the following steps:

[0055] Provide a PET substrate 110 with a thickness of 0.1 mm, which is washed and dried for later use;

[0056] In a vacuum of 1×10 -5 In the vacuum coating system of Pa, the anode layer is prepared by thermal resistance evaporation on the surface of the substrate 110. First, thermal resistance evaporation is used to prepare NdF 3 Layer 120 with a thickness of 60nm, then thermal resistance evaporation to prepare a metal Ag layer 130 with a thickness of 18nm, and finally thermal resistance evaporation to prepare MoO 3 Layer 140 with a thickness of 5nm and an evaporation rate of 0.1nm / s;

[0057] Preparation of organic electroluminescence unit 150: in a vacuum of 1×10 -5 In the vacuum c...

Embodiment 2

[0061] The structure of the organic electroluminescent device of this embodiment is: PES substrate / CeF 3 / Au / ReO 3 / MeO-TPD / DCJTB:Alq 3 (5:100) / TPBi / Ag.

[0062] The preparation method of the organic electroluminescent device 100 of this embodiment comprises the following steps:

[0063] Provide a PES substrate 110 with a thickness of 0.5mm, wash and dry for later use;

[0064] In a vacuum of 1×10 -3 In the vacuum coating system of Pa, the anode layer is prepared by thermal resistance evaporation on the surface of the substrate, and the thermal resistance evaporation is first prepared to prepare CeF 3 Layer 120 with a thickness of 100nm, then thermal resistance evaporation to prepare metal Au layer 130 with a thickness of 30nm, and finally thermal resistance evaporation to prepare ReO 3 Layer 140 with a thickness of 10nm and an evaporation rate of 1nm / s;

[0065] Preparation of organic electroluminescence unit 150: in a vacuum of 1×10 -3 In the vacuum coating system of ...

Embodiment 3

[0069] The structure of the organic electroluminescent device of this embodiment is: PI substrate / SiO / Al / V 2 o 5 / TPD / FIrpic:CBP (15:100) / BCP / Ag.

[0070] The preparation method of the organic electroluminescent device 100 of this embodiment comprises the following steps:

[0071] Provide a PI substrate 110 with a thickness of 0.2mm, wash and dry for later use;

[0072] In a vacuum of 1×10 -4 In the vacuum coating system of Pa, the anode layer is prepared by thermal resistance evaporation on the surface of the substrate. First, the SiO layer 120 is prepared by thermal resistance evaporation with a thickness of 80nm, and then the metal Al layer 130 is prepared by thermal resistance evaporation with a thickness of 20nm. Finally, the thermal resistance evaporation is prepared. V 2 o 5 Layer 140 with a thickness of 8nm and an evaporation rate of 0.5nm / s;

[0073] Preparation of organic electroluminescence unit 150: in a vacuum of 1×10 -4 In the vacuum coating system of Pa, ...

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Abstract

The invention relates to an organic light emission diode, which comprises a substrate, an anode layer, an organic light emission unit and a cathode layer, wherein the substrate, the anode layer, the organic light emission unit and the cathode layer are successively laminated; the organic light emission unit comprises a hole transmission layer, a light emission layer and an electron transmission layer, wherein the hole transmission layer, the light emission layer and the electron transmission layer are successively laminated on the surface of the anode layer; the anode layer comprises a dielectric layer, a metal layer and an oxide layer, wherein the dielectric layer, the metal layer and the oxide layer are successively laminated, the thickness of the dielectric layer is 60-100nm, the thickness of the metal layer is 18-30nm, and the thickness of the oxide layer is 5-10nm. The organic light emission diode provided by the invention adopts the dielectric material of which the refractive index more approaches to the refractive index of the substrate as a reflected light offset layer, and the reasonably-arranged thickness of the dielectric layer of which the reflective index is 1.55-1.7 can cancel interference generated by the reflected light on two interfaces of the film so as to reduce light reflection and improve the light emission luminance and the light emission efficiency of the diode. In addition, the invention also discloses a preparation method for the organic light emission diode.

Description

technical field [0001] The invention relates to the field of organic electroluminescent devices, in particular to an organic electroluminescent device and a preparation method thereof. Background technique [0002] Organic Light Emission Diode (OLED), hereinafter referred to as OLED, has the characteristics of high brightness, wide range of material selection, low driving voltage, fully cured active light emission, etc., and has the advantages of high definition, wide viewing angle, and fast response speed. , is a very potential display technology and light source, in line with the development trend of mobile communication and information display in the information age, and the requirements of green lighting technology, it is the focus of many researchers at home and abroad. [0003] The advantage of using a flexible OLED light-emitting device is that it is flexible and light, but OLED light-emitting devices also have some problems. For example, ITO film is usually used as a...

Claims

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Application Information

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IPC IPC(8): H01L51/54H01L51/52H01L51/56
Inventor 周明杰冯小明张娟娟王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD