Method for chemically plating Ni-P alloy on SiC particle surface

A particle surface, chemical plating technology, applied in liquid chemical plating, metal material coating process, coating and other directions, can solve the problems of complicated process, limited application, expensive drugs, etc., and achieve the effect of simple process and good effect

Inactive Publication Date: 2015-06-10
QINGDAO UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electroless plating process for modifying SiC particles disclosed in the above technical scheme requires a series of pretreatments such as oxidation, hydrophilicity, sensitization, and activation on SiC particles. The process is complicated and the drugs used are extremely expensive, which limits the practical use of this method. Applications

Method used

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  • Method for chemically plating Ni-P alloy on SiC particle surface
  • Method for chemically plating Ni-P alloy on SiC particle surface

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0024] A method for chemically plating Ni-P alloy on the surface of SiC particles, comprising: (1) configuring plating solution: preparing the required plating solution for chemically plating Ni-P alloy in proportion, and the formula of said plating solution is: nickel sulfate 20g / L , sodium hypophosphite 10g / L, citric acid 10g / L, sodium acetate 5g / L, potassium iodate 0.01mg / L, sodium dodecylbenzenesulfonate 0.01mg / L; (2) Heating the bath: put The plating tank with the prepared plating solution is heated in a constant temperature water bath, and the plating temperature is 80°C; (3) Add SiC particles and stir: add the weighed SiC particles directly into the above plating solution, use the The glass rod coated with Ni-P alloy is induced to activate; (4) Plating until the plating solution is tumbling: the plating time is 3 hours, and the pH value of the plating solution is adjusted with 1:5 ammonia water, and the pH value is adjusted to 4.6 until There is a tumbling phenomenon in...

Embodiment 2

[0026] A method for chemically plating Ni-P alloy on the surface of SiC particles, comprising: (1) configuring plating solution: preparing the required plating solution for chemically plating Ni-P alloy in proportion, and the formula of said plating solution is: nickel sulfate 28g / L , sodium hypophosphite 20g / L, citric acid 20g / L, sodium acetate 15g / L, potassium iodate 0.02mg / L, sodium dodecylbenzenesulfonate 0.02mg / L; (2) Heating the bath: put The plating tank with the prepared plating solution is heated in a constant temperature water bath, and the plating temperature is 85°C; (3) Add SiC particles and stir: add the weighed SiC particles directly into the above plating solution, use the The glass rod coated with Ni-P alloy is induced to activate; (4) Plating until the plating solution is tumbling: the plating time is 4 hours, and the pH value of the plating solution is adjusted with 1:5 ammonia water, and the pH value is adjusted to 4.8 until There is a tumbling phenomenon i...

Embodiment 3

[0028] A method for chemically plating Ni-P alloy on the surface of SiC particles, comprising: (1) configuring plating solution: preparing the required plating solution for chemically plating Ni-P alloy in proportion, the formula of said plating solution is nickel sulfate 40g / L, Sodium hypophosphite 30g / L, citric acid 30g / L, sodium acetate 25g / L, potassium iodate 0.05mg / L, sodium dodecylbenzenesulfonate 0.05mg / L; The plating tank with the prepared plating solution is heated in a constant temperature water bath, and the plating temperature is 90°C; (3) Add SiC particles and stir: add the weighed SiC particles directly into the above plating solution, use the plated A glass rod with Ni-P alloy was used to induce activation; (4) Plating until the plating solution was tumbling: the plating time was 5 hours, and the pH value of the plating solution was adjusted with 1:5 ammonia water, and the pH value was adjusted to 5.0 until the plating solution There is a tumbling phenomenon in ...

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Abstract

The invention discloses a method for chemically plating Ni-P alloy on SiC particle surface. The method for chemically plating the Ni-P alloy on the SiC particle surface includes that directly adding weighted SiC particles to chemical plating Ni-P alloy solution, using a glass rod plated with the alloy to induce and activate the chemical plating solution in thermostatic water bath, or adding a metal plate plated with the alloy to induce and activate till appearing a writhing phenomenon, ending plating, and obtaining the SiC particles plated with Ni-P alloy element layers through precipitating, filtering, drying and the like. The particles can be used as particle reinforcement to prepare metal-base composite material, and meanwhile, the particles are basic raw material for preparing engineering material and function material.

Description

technical field [0001] The invention relates to the technical field of nanoparticle surface treatment, in particular to a method for chemically plating Ni-P alloy on the surface of SiC particles. Background technique [0002] At present, SiC particles are widely used as particle reinforcements to prepare metal matrix composites, and are also the basic raw materials for the preparation of engineering materials and functional materials. Many scholars at home and abroad are actively working on the application research of SiC particles. In practical applications, it is found that if bare SiC particles are directly added to the metal matrix to prepare reinforced composite materials, the interface wettability will be poor due to the essential difference between the covalent bonds of SiC particles and the metal bonds of the metal matrix, and the SiC particles will When in contact with the metal matrix, a significant solid-phase reaction will occur at the interface above 800 ° C, r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/36
Inventor 侯俊英
Owner QINGDAO UNIV OF SCI & TECH
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