Transistor forming method
A technology of transistors and contact holes, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as silicide damage, and achieve good electrical connection effects
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[0037] In view of the problem that the silicide contact layer in the contact hole is easily damaged as mentioned in the background art, the method of forming the contact hole in the transistor is analyzed. Before forming the gate contact hole, it is necessary to fill the source and drain contact holes with an organic resistor. The etchant layer provides a flat surface for the photolithography of the gate contact hole. During the subsequent removal of the organic resist layer in the source and drain contact holes, it is easy to damage the contact layer at the bottom of the source and drain contact holes. In addition, before filling the conductive layer into the gate contact hole and the source / drain contact hole, it is necessary to clean the inside of the gate contact hole and the source / drain contact hole. The cleaning agent used for cleaning will also damage the silicide contact layer. .
[0038] A process of forming a protective layer is added between the formation of the gate ...
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